A novel 700-V SOI LDMOS with double-sided trench

被引：95

作者：

Luo, Xiaorong ^{[1
]}

Zhang, Bo ^{[1
]}

Li, Zhaoji ^{[1
]}

Guo, Yufeng ^{[1
]}

Tang, Xinwei ^{[1
]}

Liu, Yong ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 05期

基金：

中国国家自然科学基金;

关键词：

breakdown voltage (BV); charge; double-sided trench (DT); electric field; modulate;

D O I：

10.1109/LED.2007.894648

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel silicon-on-insulator (SOI) high-voltage device structure with double-sided trenches on the buried oxide layer (DT SOI) is proposed and its breakdown characteristics are investigated theoretically and, experimentally in this letter. Theoretically, the charges implemented in the DTs, whose density changes with the drain voltage, increase the electric field in the buried layer and modulate the electric field in the drift region, which results in the enhancement of the breakdown voltage (BV). Experimentally, the BV of 730 V is obtained for the first time in SOI LDMOS with DT on 20-mu m SOI layer and 1-mu m buried oxide layer.

引用

页码：422 / 424

页数：3

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