96-GHz static frequency divider in SiGe bipolar technology

被引：35

作者：

Rylyakov, A ^{[1
]}

Zwick, T ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2004年 / 39卷 / 10期

关键词：

SiGe; static frequency dividers;

D O I：

10.1109/JSSC.2004.833562

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A static frequency divider designed in a 210-GHz f(T), 0.13-mum SiGe bipolar technology is reported. At a -5.5-V power supply, the circuit consumes 44 mA per latch (140 mA total for the chip, with input-output stages). With single-ended sine wave clock input, the divider is operational from 7.5 to 91.6 GHz. Differential clocking under the same conditions extends the frequency range to 96.6 GHz. At -5.0 V and 100 mA total current (28 mA per latch), the divider operates from 2 to 85.2 GHz (single-ended sine wave input).

引用

页码：1712 / 1715

页数：4

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