Lattice dynamics and temperature dependence of the first-order Raman spectra for α-SiO2 crystals

被引：20

作者：

Ichikawa, S

Suda, J

Sato, T ^{[1
]}

Suzuki, Y

机构：

[1] Hirosaki Univ, Dept Mat Sci & Technol, Fac Sci & Technol, Hirosaki, Aomori 0368561, Japan

[2] Aomori Polytech Coll, Dept Elect Engn, Goshogawara 0370002, Japan

来源：

JOURNAL OF RAMAN SPECTROSCOPY | 2003年 / 34卷 / 02期

关键词：

Raman spectra; linewidth; frequency shift; phonon dispersion curve; two-phonon density of states; cubic anharmonic term; quartic anharmonic term;

D O I：

10.1002/jrs.966

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

The phonon dispersion curves for alpha-SiO2 crystals were calculated on the basis of a rigid-ion model. The first-order Raman spectra of the A(1) mode of the alpha-SiO2 crystal were measured in the temperature range from 303.1 to 773.1 K. The temperature dependence of the linewidth was analyzed by using the phonon dispersion curves, and the results showed that it was caused approximately by the cubic anharmonic term in the crystal potential energy. The temperature dependence of the frequency shift of the A(1) mode was analyzed by using the lattice dynamic perturbative treatment. We found that the quartic anharmonic term of the first-order perturbation and also the cubic term of the second-order perturbation contribute to the temperature dependence of the frequency shift of the A(1) mode in the alpha-SiO2 crystal. Copyright (C) 2003 John Wiley Sons, Ltd.

引用

页码：135 / 141

页数：7

共 30 条

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