Temperature and annealing effects on photoluminescence spectra of (InAs)1/(GaP)2 superlattices grown by solid-source molecular beam epitaxy

Anomalous variation of photoluminescence (PL) wavelengths with temperature was observed in (InAs)(1)/(GaP)(2) short-period-superlattice (SPS) quantum wells grown by solid-source molecular beam epitaxy with different phosphorus and arsenic cracker temperatures. We believed that the anomalous PL behavior could be attributed to the multi-axial strain effect existed at the abrupt InAs and GaP interfaces in the SPS structure. After rapid thermal anneal (RTA) treatment, the anomalous PL spectra in the low temperature region disappeared but the high temperature PL characteristics remained, which revealed the thermal stability of the (InAs)(1)/(GaP)(2) quantum well structures and its potential in replacing InGaAsP quaternary.