Pseudomorphic In0.7Ga0.3As/In0.52Al0.48As HEMTs with super-flat interfaces fabricated on (411)A-oriented InP substrates

被引：1

作者：

Higashiwaki, M ^{[1
]}

Kitada, T ^{[1
]}

Aoki, T ^{[1
]}

Shimomura, S ^{[1
]}

Yamashita, Y ^{[1
]}

Endoh, A ^{[1
]}

Hikosaka, K ^{[1
]}

Mimura, T ^{[1
]}

Matsui, T ^{[1
]}

Hiyamizu, S ^{[1
]}

机构：

[1] Commun Res Labs, Tokyo 1840015, Japan

来源：

2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ICIPRM.2000.850362

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report the device fabrication and characteristics of 50-nm-gate pseudomorphic In0.7Ga0.3As/In0.52Al0.48As high electron mobility transistors (HEMTs) grown on a (411) A-oriented InP substrate by molecular beam epitaxy, which is the first report, to our knowledge, of HEMTs grown on any InP substrate except a conventional (100)-oriented InP substrate. The pseudomorphic HEMTs on the (411) A InP substrate showed a higher electron mobility than those on the (100) InP substrate at not only low temperatures but also room temperature. The (411) A HEMTs provided excellent DC and RF characteristics, showing a very high transconductance (1.1 S/mm) and one of the best cutoff frequencies (355 GHz) ever reported.

引用

页码：573 / 576

页数：4

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