A study of thick 3C-SiC epitaxial layers grown on 6H-SIC substrates by sublimation epitaxy in vacuum

被引：21

作者：

Lebedev, A. A. ^{[1
]}

Zelenin, V. V.

Abramov, P. L.

Bogdanova, E. V.

Lebedev, S. P.

Nel'son, D. K.

Razbirin, B. S.

Shcheglov, M. P.

Tregubova, A. S.

Suvajarvi, M.

Yakimova, R.

机构：

[1] Russian Acad Sci, Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden

来源：

SEMICONDUCTORS | 2007年 / 41卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

61.50.Nw; 73.61.Le; 78.55.Hx; 81.05.Hd; 81.15.Ef;

D O I：

10.1134/S1063782607030037

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

3C-SiC epitaxial layers with a thickness ofup to 100 pm were grown on 6H-SiC hexagonal sub strates by sublimation epitaxy in vacuum. The n-type epitaxial layers with the area in the range 0.3-0.5 cm(2) and uncompensated donor concentration N-d - N-a - (10(17)-10(18)) cm(-3) were produced at maximum growth rates of up to 200 mu m/h. An X-ray analysis demonstrated that the epitaxial layers are composed of the 3C-SiC polytype, without inclusions of other polytypes. The photoluminescence (PL) spectrum of the layers was found to be dominated by the donor-acceptor (Al-N) recombination band peaked at hv approximate to 2.12 eV. The PL spectrum measured at 6 K was analyzed in detail. It is concluded that the epitaxial layers obtained can serve as substrates for 3C-SiC-based electronic devices.

引用

页码：263 / 265

页数：3

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