Compact Modeling of SOI-LDMOS Including Quasi-Saturation Effect

被引:0
|
作者
Lekshmi, T. [1 ]
Mittal, Amit Kumar [1 ]
DasGupta, Amitava [1 ]
Chakravorty, Anjan [1 ]
DasGupta, Nandita [1 ]
机构
[1] Indian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, India
来源
2009 2ND INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY | 2009年
关键词
LDMOS; quasi-saturation; compact model; DC modeling; SOI technology;
D O I
暂无
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
This paper presents a physics-based compact de model for high voltage silicon on insulator lateral double diffused MOS (SOI-LDMOS) transistor, assuming uniform doping for the channel. It uses MM20 model for the channel and drift region under the thin gate oxide, and proposes a new model for the drift region under the field oxide. This model shows that the current at higher gate voltages in SOI-LDMOS, is limited by the velocity saturation in the drift region under the field oxide, which determines the device behavior in the quasi-saturation region. The model exhibits high level of accuracy over wide bias ranges.
引用
收藏
页码:114 / 117
页数:4
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