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Compact Modeling of SOI-LDMOS Including Quasi-Saturation Effect
被引:0
|作者:
Lekshmi, T.
[1
]
Mittal, Amit Kumar
[1
]
DasGupta, Amitava
[1
]
Chakravorty, Anjan
[1
]
DasGupta, Nandita
[1
]
机构:
[1] Indian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, India
来源:
2009 2ND INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY
|
2009年
关键词:
LDMOS;
quasi-saturation;
compact model;
DC modeling;
SOI technology;
D O I:
暂无
中图分类号:
TP301 [理论、方法];
学科分类号:
081202 ;
摘要:
This paper presents a physics-based compact de model for high voltage silicon on insulator lateral double diffused MOS (SOI-LDMOS) transistor, assuming uniform doping for the channel. It uses MM20 model for the channel and drift region under the thin gate oxide, and proposes a new model for the drift region under the field oxide. This model shows that the current at higher gate voltages in SOI-LDMOS, is limited by the velocity saturation in the drift region under the field oxide, which determines the device behavior in the quasi-saturation region. The model exhibits high level of accuracy over wide bias ranges.
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页码:114 / 117
页数:4
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