A 0.75-V, 4-μW, 15-ppm/°C, 190°C temperature range, voltage reference

被引：15
作者：
Andreou, Charalambos M. [1 ]
Georgiou, Julius [1 ]
机构：
[1] Univ Cyprus, Dept Elect & Comp Engn, Univ House Anastasios G Leventis, CY-1678 Nicosia, Cyprus
来源：
INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS | 2016年 / 44卷 / 05期
关键词：
analog integrated circuits; bandgap voltage reference; BGR; CMOS; temperature curvature compensation; reference circuits; subthreshold; low voltage; low power; temperature coefficient; temperature drift; voltage reference; REFERENCE CIRCUIT; PPM/DEGREES-C; BANDGAP; SUB-1-V;
D O I：
10.1002/cta.2122
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A low-voltage, low-power, low-area, wide-temperature-range CMOS voltage reference is presented. The proposed reference circuit achieves a measured temperature drift of 15 ppm/degrees C for an extremely wide temperature range of 190 degrees C (-60 to 130 degrees C) while consuming only 4 W at 0.75 V. It performs a high-order curvature correction of the reference voltage while consisting of only CMOS transistors operating in subthreshold and polysilicon resistors, without utilizing any diodes or external components such as compensating capacitors. A trade-off of this circuit topology, in its current form, is the high line sensitivity. The design was fabricated using TowerJazz semiconductor's 0.18-mu m standard CMOS technology and occupies an area of 0.039 mm(2). The proposed reference circuit is suitable for high-precision, low-energy-budget applications, such as mobile systems, wearable electronics, and energy harvesting systems. Copyright (C) 2015 John Wiley & Sons, Ltd.
引用
收藏
页码：1029 / 1038
页数：10
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