Effect of MeV ion induced heating on secondary electron emission from Si surface and estimation of local temperature

被引：3

作者：

Ghosh, Subhash ^{[1
]}

Karmakar, Prasanta ^{[1
]}

机构：

[1] HBNI, Variable Energy Cyclotron Ctr, 1-AF, Kolkata 700064, India

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2022年 / 516卷

关键词：

MeV ion -solid interaction; Secondary electron emission; Ion beam heating; Local surface temperature; Collisional electron; Thermionic electron; STOPPING POWER; YIELDS; DEPENDENCE; SILICON; PROBE;

D O I：

10.1016/j.nimb.2022.02.001

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We report the variation of secondary-electron yield and target temperature with the variation of ion beam intensity during 100 MeV N+5 bombardment on Si surfaces. Theoretical understanding of secondary-electron emission during ion bombardment predicts no variation of yield with ion beam intensity. We discovered that the variation of secondary-electron yield arises due to the rise of local temperature at ion impact sites of the target. The secondary-electron yield first decreases with the increase of ion beam current but subsequently, it increases with the further rise of beam current. The initial decrease is due to the temperature-dependent change of electrochemical potential of Si. The considerable increase of the secondary-electron yield with a further increase of ion beam current is caused by local surface heating and subsequent additional thermionic electron emission. We have estimated the surface temperature of ion-impact sites by separating the thermionic electron current from the collisional secondary electron current.

引用

页码：1 / 7

页数：7

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