Multilayer graphene electro-absorption optical modulator based on double-stripe silicon nitride waveguide

被引：44

作者：

Fan, Meiyong ^{[1
]}

Yang, Huimin ^{[1
]}

Zheng, Pengfei ^{[1
]}

Hu, Guohua ^{[1
]}

Yun, Binfeng ^{[1
]}

Cui, Yiping ^{[1
]}

机构：

[1] Southeast Univ, Adv Photon Ctr, Nanjing 210096, Jiangsu, Peoples R China

来源：

OPTICS EXPRESS | 2017年 / 25卷 / 18期

基金：

美国国家科学基金会;

关键词：

ELECTROOPTIC MODULATORS; ABSORPTION; DEVICES; DESIGN; LIMITS; SOI;

D O I：

10.1364/OE.25.021619

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A graphene electro-absorption optical modulator based on double-stripe silicon nitride waveguide is proposed and analyzed. By embedding four graphene layers in the double-stripe silicon nitride waveguide and the graphene layers co-electrode design, the total metal-graphene contact resistance can be reduced 50% and as high as 30.6GHz modulation bandwidth can be achieved theoretically. The calculated extinction ratio and figure of merit are 0.1658dB/um and 9.7, respectively. And the required switching voltage from its minimum to maximum absorption state is 3.8180V and 780.50fJ/bit power consuming can be achieved. The proposed modulator can remedy the lack of high speed modulator on the passive silicon nitride waveguide. (C) 2017 Optical Society of America

引用

页码：21619 / 21629

页数：11

共 28 条

[1] Planar waveguides with less than 0.1 dB/m propagation loss fabricated with wafer bonding [J].

Bauters, Jared F. ;

Heck, Martijn J. R. ;

John, Demis D. ;

Barton, Jonathon S. ;

Bruinink, Christiaan M. ;

Leinse, Arne ;

Heideman, Rene G. ;

Blumenthal, Daniel J. ;

Bowers, John E. .

OPTICS EXPRESS, 2011, 19 (24) :24090-24101

[2] Controlling Electron-Phonon Interactions in Graphene at Ultrahigh Carrier Densities [J].

Efetov, Dmitri K. ;

Kim, Philip .

PHYSICAL REVIEW LETTERS, 2010, 105 (25)

[3] A Three-Dimensional Silicon Nitride Polarizing Beam Splitter [J].

Feng, Jijun ;

Akimoto, Ryoichi .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2014, 26 (07) :706-709

[4] Enhanced performance of graphene-based electro-absorption waveguide modulators by engineered optical modes [J].

Gosciniak, J. ;

Tan, D. T. H. ;

Corbett, B. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2015, 48 (23)

[5] High-quality Si3N4 circuits as a platform for graphene-based nanophotonic devices [J].

Gruhler, N. ;

Benz, C. ;

Jang, H. ;

Ahn, J. -H. ;

Danneau, R. ;

Pernice, W. H. P. .

OPTICS EXPRESS, 2013, 21 (25) :31678-31689

[6] Focused-Laser-Enabled p-n Junctions in Graphene Field-Effect Transistors [J].

Kim, Young Duck ;

Bae, Myung-Ho ;

Seo, Jung-Tak ;

Kim, Yong Seung ;

Kim, Hakseong ;

Lee, Jae Hong ;

Ahn, Joung Real ;

Lee, Sang Wook ;

Chun, Seung-Hyun ;

Park, Yun Daniel .

ACS NANO, 2013, 7 (07) :5850-5857

[7] High-speed waveguide-coupled graphene-on-graphene optical modulators [J].

Koester, Steven J. ;

Li, Mo .

APPLIED PHYSICS LETTERS, 2012, 100 (17)

[8] Discussion of the Epsilon-Near-Zero Effect of Graphene in a Horizontal Slot Waveguide [J].

Kwon, Min-Suk .

IEEE PHOTONICS JOURNAL, 2014, 6 (03)

[9] Broadband graphene electro-optic modulators with sub-wavelength thickness [J].

Lee, C-C ;

Suzuki, S. ;

Xie, W. ;

Schibli, T. R. .

OPTICS EXPRESS, 2012, 20 (05) :5264-5269

[10] CMOS-compatible multiple-wavelength oscillator for on-chip optical interconnects [J].

Levy, Jacob S. ;

Gondarenko, Alexander ;

Foster, Mark A. ;

Turner-Foster, Amy C. ;

Gaeta, Alexander L. ;

Lipson, Michal .

NATURE PHOTONICS, 2010, 4 (01) :37-40

← 1 2 3 →