Blue emission in Mg doped GaN studied by time resolved spectroscopy

被引：8

作者：

Seitz, R ^{[1
]}

Gaspar, C

Monteiro, T

Pereira, E

Leroux, M

Beaumont, B

Gibart, P

机构：

[1] Univ Aveiro, Dept Fis, P-3810 Aveiro, Portugal

[2] CNRS, Ctr Rech Heteroepitaxie & Applicat, CRHEA, F-06560 Valbonne, France

来源：

DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷

关键词：

GaN : Mg; blue emission; time resolved spectroscopy;

D O I：

10.4028/www.scientific.net/MSF.258-263.1155

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A strong blue emission is present when GaN films are heavily doped with Mg. It is known that compensation by non-intended donors reduces the free hole density at least two orders of magnitude when compared with the Mg concentration. Previous work on the blue band in heavily Mg doped (10(20) cm(-3)) material shows that two main emissions contribute to the band. The dependence on excitation intensity shows a shift of the peak position of the emissions too large to be attributed to donor acceptor pair (DAP) recombination. In the present work we analyse by time resolved spectroscopy, in conditions of low excitation density, the temperature dependence of the blue emission and compare it with steady state data. From the data a model for this emission is proposed.

引用

页码：1155 / 1160

页数：6

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