Enlargement of crystal grains in thin silicon films by continuous-wave laser irradiation

被引：12

作者：

Fujii, Shuntaro ^{[1
]}

Kuroki, Shin-Ichiro ^{[1
]}

Kotani, Koji ^{[1
]}

Ito, Takashi ^{[1
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 4B期

关键词：

polycrystalline Si; recrystallization; cw laser;

D O I：

10.1143/JJAP.46.2501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The cw laser recrystallization of amorphous silicon (a-Si) thin films deposited on SiO2 films with Si(100) substrates was investigated by controlling irradiation conditions. The effects of the laser spot shape and laser-irradiated region overlap were found important resulting in two dimensional crystal growth different from conventional lateral crystallization. A laser beam spot was designed to realize a gradual temperature slope in the laser-irradiated region. The crystal grain growth of the Si thin films was effectively enhanced.. Raster scanning was performed to make the crystal growth direction regular and effectively enhanced the crystallization of the recrystallized Si thin films. The laser-irradiated region overlap also effectively enhanced the crystallization of the recrystallized Si thin films. Consequently, (100) well-oriented polycrystalline Si thin films with an average grain size of 1.60 mu m, which is about 5 times larger than that obtained by conventional excimer laser recrystallization, were obtained.

引用

页码：2501 / 2504

页数：4

共 11 条

[1] High performance low temperature polycrystalline silicon thin film transistors on non-alkaline glass produced using diode pumped solid state continuous wave laser lateral crystallization [J].

Hara, A ;

Takei, M ;

Takeuchi, F ;

Suga, K ;

Yoshino, K ;

Chida, M ;

Kakehi, T ;

Ebiko, Y ;

Sano, Y ;

Sasaki, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (4A) :1269-1276

[2] High-performance polycrystalline silicon thin film transistors on non-alkali glass produced using continuous wave laser lateral crystallization [J].

Hara, A ;

Takeuchi, F ;

Takei, M ;

Suga, K ;

Yoshino, K ;

Chida, M ;

Sano, Y ;

Sasaki, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (3B) :L311-L313

[3] Mobility enhancement limit of excimer-laser-crystallized polycrystalline silicon thin film transistors [J].

Hara, A ;

Takeuchi, F ;

Sasaki, N .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (02) :708-714

[4]

HIGASHI N, INT WORKSH 2005 ACT, P289

[5]

KIM YJ, INT WORKSH 2005 ACT, P249

[6] A systematic study and optimization of parameters affecting grain size and surface roughness in excimer laser annealed polysilicon thin films [J].

Marmorstein, A ;

Voutsas, AT ;

Solanki, R .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (09) :4303-4309

[7]

MATSUMURA M, INT WORKSH 2005 ACT

[8] DEPENDENCE OF ELECTRON CHANNEL MOBILITY ON SI-SIO2 INTERFACE MICROROUGHNESS [J].

OHMI, T ;

KOTANI, K ;

TERAMOTO, A ;

MIYASHITA, M .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (12) :652-654

[9] DEPENDENCE OF THIN-OXIDE FILMS QUALITY ON SURFACE MICROROUGHNESS [J].

OHMI, T ;

MIYASHITA, M ;

ITANO, M ;

IMAOKA, T ;

KAWANABE, I .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (03) :537-545

[10] XECL EXCIMER LASER ANNEALING USED IN THE FABRICATION OF POLY-SI TFTS [J].

SAMESHIMA, T ;

USUI, S ;

SEKIYA, M .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) :276-278

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