Effect of B-site isovalent doping on electrical and ferroelectric properties of lead free bismuth titanate ceramics

被引:17
作者
Subohi, Oroosa [1 ]
Kumar, G. S. [2 ]
Malik, M. M. [1 ]
Kurchania, Rajnish [1 ]
机构
[1] Maulana Azad Natl Inst Technol, Dept Phys, Bhopal 462003, MP, India
[2] Osmania Univ, Dept Phys, Hyderabad 500007, AP, India
关键词
Bismuth titanate; Ceramics; Dielectric properties; Ferroelectric properties; COMPOSITION-DEPENDENT STRUCTURES; COMBUSTION SYNTHESIS; ZR; BEHAVIOR;
D O I
10.1016/j.jpcs.2016.02.019
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In the present work, zirconium modified bismuth titanate ceramics have been studied as potential lead-free ferroelectric materials over a broad temperature range (RT - 800 degrees C). Polycrystalline samples of Bi4Ti3-xZrxO12 (x=0.2, 0.4, 0.6) (BZrT) with high electrical resistivity were prepared using the solution combustion technique. The effect of Zr doping on the crystalline structure, ferroelectric properties and electrical conduction characteristics of BZrT ceramics were explored. Addition of zirconium to bismuth titanate enhances its dielectric constant and reduces the loss factor as it introduces orthorhombic distortion in bismuth titanate lattice which is exhibited by the growth along (0010) lattice plane. Activation energy due to relaxation is found to be greater than that due to conduction thus confirming that electrical conduction in these ceramics is not due to relaxation of dipoles. Remanent polarization of the doped samples increases as the Zirconium content increases. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码:91 / 99
页数:9
相关论文
共 28 条
[1]   Sol-gel combustion synthesis of Zr-doped BaTiO3 nanopowders and ceramics: Dielectric and ferroelectric studies [J].
Aghayan, M. ;
Zak, A. Khorsand ;
Behdani, M. ;
Hashim, A. Manaf .
CERAMICS INTERNATIONAL, 2014, 40 (10) :16141-16146
[2]   Synthesis of bismuth titanate by the urea method [J].
Anilkumar, M ;
Dhage, SR ;
Ravi, V .
MATERIALS LETTERS, 2005, 59 (04) :514-516
[3]   Microwave-assisted reaction sintering of bismuth titanate-based ceramics [J].
Azurmendi, N ;
Caro, I ;
Caballero, AC ;
Jardiel, T ;
Villegas, M .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2006, 89 (04) :1232-1236
[4]   Dielectric relaxation on Ba1-xBi2x/3Zr0.25Ti0.75O3 ceramic [J].
Badapanda, T. ;
Senthil, V. ;
Rout, S. K. ;
Panigrahi, S. ;
Sinha, T. P. .
MATERIALS CHEMISTRY AND PHYSICS, 2012, 133 (2-3) :863-870
[5]   ORIGIN OF FERROELECTRICITY IN PEROVSKITE OXIDES [J].
COHEN, RE .
NATURE, 1992, 358 (6382) :136-138
[6]   Influence of isovalent and aliovalent substitutions at Ti site on bismuth sodium titanate-based compositions on piezoelectric properties [J].
Danwittayakul, S. ;
Vaneesorn, N. ;
Jinawath, S. ;
Thanaboonsombut, A. .
CERAMICS INTERNATIONAL, 2008, 34 (04) :765-768
[7]   Composition-dependent structures and properties of Bi4Ti3-xZrxO12 ceramics [J].
Du, CL ;
Zhang, ST ;
Cheng, GX ;
Lu, MH ;
Gu, ZB ;
Wang, J ;
Chen, YF .
PHYSICA B-CONDENSED MATTER, 2005, 368 (1-4) :157-162
[8]   Phase transitions of Pb(ZrxTi1-x)O3 ceramics -: art. no. 064108 [J].
Frantti, J ;
Ivanov, S ;
Eriksson, S ;
Rundlöf, H ;
Lantto, V ;
Lappalainen, J ;
Kakihana, M .
PHYSICAL REVIEW B, 2002, 66 (06) :641081-6410815
[9]   Ferroelectric properties of Bi3.6Ho0.4Ti3O12 thin films prepared by sol-gel method [J].
Guo, Dongyun ;
Li, Meiya ;
Wang, Jing ;
Liu, Jun ;
Yu, Benfang .
APPLIED PHYSICS LETTERS, 2007, 91 (23)
[10]   Large remanent polarization of (Bi,Nd)4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition [J].
Kojima, T ;
Sakai, T ;
Watanabe, T ;
Funakubo, H ;
Saito, K ;
Osada, M .
APPLIED PHYSICS LETTERS, 2002, 80 (15) :2746-2748