Towards Wannier-Stark THz superlattice laser

被引：2

作者：

Andronov, A. A. ^{[1
]}

Dodin, E. P. ^{[1
]}

Zinchenko, D. I. ^{[1
]}

Nozdrin, Yu N. ^{[1
]}

机构：

[1] RAS, Inst Phys Microstruct, Nizhnii Novgorod, Russia

来源：

16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16) | 2009年 / 193卷

关键词：

NEGATIVE DIFFERENTIAL CONDUCTIVITY; QUANTUM CASCADE LASER; GAAS/AL X GA1-X; BLOCH OSCILLATOR; TRANSPORT; SEMICONDUCTORS;

D O I：

10.1088/1742-6596/193/1/012079

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Basing on measurements, computer simulations and calculations of transport properties in GaAs-GaAlAs superlattices (SL) with narrow (weak) barriers we propose and elaborate scheme of the SL Wannier-Stark (W.-S.) THz lasers. The laser transitions (tunable by applied voltage) are between levels of the first and the second W.-S. ladders corresponding to wells separated two-three periods apart and being nearby the resonant condition. The resonance provides high value of the transition matrix element that gives value of THz amplification coefficient up to 200-300 cm(-1) for the doping 5-10.10(15) cm(-3). This value is substantially higher than the one for THz quantum cascade lasers and allows to use in the lasers simple n+-SL-n+ waveguide. Some observations on transport in the SLs are given.

引用

页数：4

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