Amorphous silicon, semiconductor X-ray converter detectors for protein crystallography

被引:15
作者
Ross, S [1 ]
Zentai, G [1 ]
Shah, KS [1 ]
Alkire, RW [1 ]
Naday, I [1 ]
Westbrook, EM [1 ]
机构
[1] RADIAT MONITORING DEVICES INC,WATERTOWN,MA 02172
关键词
X-ray detector; amorphous silicon; protein crystallography; lead iodide;
D O I
10.1016/S0168-9002(97)00793-6
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Hydrogenated amorphous silicon (a-Si:H) is a semiconductor material which call be inexpensively deposited to create a large array detector or readout structure. Combining it with a suitable semiconductor X-ray sensitive converter would produce a large, sensitive detector for X-rays with energies of 6-20 keV such as used in measurements of diffraction patterns for protein crystallography. In these experiments, the diffraction patterns created when X-rays strike crystallized protein samples are used to infer the physical structure of the molecules. The requirements for the detector include the ability to record signal peaks to high diffraction order to obtain accurate mapping of the electron density of the protein molecule, plus rapid sampling of the diffraction pattern to minimize radiation dose to the exposed crystal, while maintaining high signal-to-noise ratios. In this paper we summarize our results to date measuring and modeling the suitability of various semiconductor thin films for direct X-ray detection, and of the noise and readout properties of an amorphous silicon matrix array, We provide sample diffraction patterns obtained from a protein crystal taken at the Argonne Advanced Photon Source X-ray synchrotron using a phosphor coated a-Si: H array.
引用
收藏
页码:38 / 50
页数:13
相关论文
共 50 条
  • [41] Novel, photon counting X-ray detectors
    Durst, RD
    Diawara, Y
    Khazins, D
    Medved, S
    Becker, B
    Thorson, T
    POWDER DIFFRACTION, 2003, 18 (02) : 103 - 105
  • [42] Structural change of amorphous silicon induced by X-ray irradiation from synchrotron radiation
    Sato, F
    Hirano, Y
    Kajiyama, H
    Suzuki, R
    Motooka, T
    Chikawa, J
    Takizawa, K
    OPTOELECTRONICS-DEVICES AND TECHNOLOGIES, 1996, 11 (01): : 43 - 50
  • [43] X-ray and optical investigation of KCN and HCN passivated structures based on amorphous silicon
    Pincík, E
    Kobayashi, H
    Takahashi, A
    Fujiwara, N
    Brunner, R
    Jergel, A
    Kopáni, A
    Rusnák, J
    APPLIED SURFACE SCIENCE, 2004, 235 (03) : 364 - 371
  • [44] Novel X-ray Communication Based XNAV Augmentation Method Using X-ray Detectors
    Song, Shibin
    Xu, Luping
    Zhang, Hua
    Bai, Yuanjie
    SENSORS, 2015, 15 (09) : 22325 - 22342
  • [45] Macromolecular crystallography at the Penn State X-ray core facility
    Yennawar, Neela
    Yennawar, Hemant
    ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2008, 64 : C301 - C301
  • [46] Crystallography using an X-ray free-electron laser
    Patterson, Bruce D.
    CRYSTALLOGRAPHY REVIEWS, 2014, 20 (04) : 242 - 294
  • [47] An amorphous silicon imaging system for improved X-ray image capture in nondestructive evaluation.
    Anderson, EE
    Hartney, M
    Weisfield, R
    PROCESS CONTROL AND SENSORS FOR MANUFACTURING, 1998, 3399 : 180 - 187
  • [48] X-ray Detectors Based on Halide Perovskite Materials
    Tan, Yimei
    Mu, Ge
    Chen, Menglu
    Tang, Xin
    COATINGS, 2023, 13 (01)
  • [49] Comparison of natural and synthetic diamond X-ray detectors
    S. P. Lansley
    G. T. Betzel
    P. Metcalfe
    L. Reinisch
    J. Meyer
    Australasian Physical & Engineering Sciences in Medicine, 2010, 33 : 301 - 306
  • [50] Comparison of natural and synthetic diamond X-ray detectors
    Lansley, S. P.
    Betzel, G. T.
    Metcalfe, P.
    Reinisch, L.
    Meyer, J.
    AUSTRALASIAN PHYSICAL & ENGINEERING SCIENCES IN MEDICINE, 2010, 33 (04) : 301 - 306