On the Diffusion Limit of a Semiconductor Boltzmann-Poisson System Without Micro-Reversible Process

被引：7

作者：

Masmoudi, Nader ^{[1
]}

Tayeb, Mohamed Lazhar ^{[2
]}

机构：

[1] Courant Inst Math Sci, New York, NY 10012 USA

[2] El Manar Univ, Fac Sci Tunis, Tunis, Tunisia

来源：

COMMUNICATIONS IN PARTIAL DIFFERENTIAL EQUATIONS | 2010年 / 35卷 / 07期

关键词：

Boltzmann-Poisson; Detailed balance; Diffusion approximation; Entropy dissipation; Fermi-Dirac; Hybrid-Hilbert expansion; Semiconductor; HIGH-FIELD ASYMPTOTICS; APPROXIMATION; EQUATION; CONVERGENCE; TRANSPORT;

D O I：

10.1080/03605302.2010.483659

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

This paper deals with the diffusion approximation of a semiconductor Boltzmann-Poisson system. The statistics of collisions we are considering here, is the Fermi-Dirac operator with the Pauli exclusion term and without the detailed balance principle. Our study generalizes, the result of Goudon and Mellet [11], to the multi-dimensional case.

引用

页码：1163 / 1175

页数：13

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