Inverted Top-emitting OLEDs with a n-type Si as Cathode

被引：0
作者：
Chen, Shu-ming [1 ]
Yuan, Yong-bo [1 ]
Lian, Jia-rong [1 ]
Zhou, Xiang [1 ]
机构：
[1] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat & Technol, Guangzhou 510275, Peoples R China
来源：
AD'07: Proceedings of Asia Display 2007, Vols 1 and 2 | 2007年
关键词：
inverted; top-emitting OLEDs; n-Si;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report a significant enhancement of the electron injection by inserting a 1-nm-thick Ba electron injection layer between n-Si cathode and tris (8-hydroxyquinoline) aluminum (Alq(3)) in inverted top-emitting OLEDs. The turn-on voltages of the OLEDs decreased dramatically from 20 V to 9 V and the efficiencies were significantly enhanced by a factor of 13 with Ba electron injection layer, which played a role in reducing the energy barrier for the electron injection, leading to the reduction of the turn-on voltages and the enhancement of the efficiencies of the n-Si based inverted top-emitting OLEDs.
引用
收藏
页码：164 / 167
页数：4
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共 11 条
  • [1] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON
    ALLEN, FG
    GOBELI, GW
    [J]. PHYSICAL REVIEW, 1962, 127 (01): : 150 - &
  • [2] Chan KW, 2003, PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, P216
  • [3] Improved light outcoupling for phosphorescent top-emitting organic light-emitting devices
    Chen, SF
    Zhao, Y
    Cheng, G
    Li, J
    Liu, CL
    Zhao, ZY
    Jie, ZH
    Liu, SY
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (15)
  • [4] Enhancement of electron injection in inverted top-emitting organic light-emitting diodes using an insulating magnesium oxide buffer layer
    Choi, HW
    Kim, SY
    Kim, WK
    Lee, JL
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (08)
  • [5] Highly efficient and stable inverted bottom-emission organic light emitting devices
    Chu, Ta-Ya
    Chen, Jenn-Fang
    Chen, Szu-Yi
    Chen, Chao-Jung
    Chen, Chin H.
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (05)
  • [6] SILICON COMPATIBLE ORGANIC LIGHT-EMITTING DIODE
    KIM, HH
    MILLER, TM
    WESTERWICK, EH
    KIM, YO
    KWOCK, EW
    MORRIS, MD
    CERULLO, M
    [J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1994, 12 (12) : 2107 - 2113
  • [7] FABRICATION OF POLYMER LIGHT-EMITTING-DIODES USING DOPED SILICON ELECTRODES
    PARKER, ID
    KIM, HH
    [J]. APPLIED PHYSICS LETTERS, 1994, 64 (14) : 1774 - 1776
  • [8] A top-emission organic light-emitting diode with a silicon anode and an Sm/Au cathode
    Qin, GG
    Xu, AG
    Ma, GL
    Ran, GZ
    Qiao, YP
    Zhang, BR
    Chen, WX
    Wu, SK
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (22) : 5406 - 5408
  • [9] Organic light-emitting diodes with n-type silicon anode
    Ran, GZ
    Xu, YH
    Ma, GL
    Xu, AG
    Qiao, YP
    Chen, WX
    Qin, GG
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (08) : 761 - 764
  • [10] Enhanced hole injection in a bilayer vacuum-deposited organic light-emitting device using a p-type doped silicon anode
    Zhou, X
    He, J
    Liao, LS
    Lu, M
    Xiong, ZH
    Ding, XM
    Hou, XY
    Tao, FG
    Zhou, CE
    Lee, ST
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (04) : 609 - 611
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