Structural and optical properties of thin films porous amorphous silicon carbide formed by Ag-assisted photochemical etching

被引：15

作者：

Boukezzata, A. ^{[1
]}

Keffous, A. ^{[1
]}

Cheriet, A. ^{[1
]}

Belkacem, Y. ^{[1
]}

Gabouze, N. ^{[1
]}

Manseri, A. ^{[1
]}

Nezzal, G. ^{[2
]}

Kechouane, M. ^{[3
]}

Bright, A. ^{[3
]}

Guerbous, L. ^{[4
]}

Menari, H. ^{[1
]}

机构：

[1] Silicon Technol Dev Unit UDTS, Algiers, Algeria

[2] Houari Boumed Univ USTHB, Fac Chem, Algiers, Algeria

[3] Houari Boumed Univ USTHB, Fac Phys, Algiers, Algeria

[4] Algerian Nucl Res Ctr CRNA, Algiers, Algeria

来源：

APPLIED SURFACE SCIENCE | 2010年 / 256卷 / 18期

关键词：

Silicon carbide; Thin layer; Photochemical etching; SIMS; SEM;

D O I：

10.1016/j.apsusc.2010.03.037

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this work, we present the formation of porous layers on hydrogenated amorphous SiC (a-SiC: H) by Ag-assisted photochemical etching using HF/K(2)S(2)O(8) solution under UV illumination at 254 nm wavelength. The amorphous films a-SiC: H were elaborated by d.c. magnetron sputtering using a hot pressed polycrystalline 6H-SiC target. Because of the high resistivity of the SiC layer, around 1.6 M Omega cm and in order to facilitate the chemical etching, a thin metallic film of high purity silver (Ag) has been deposited under vacuum onto the thin a-SiC: H layer. The etched surface was characterized by scanning electron microscopy, secondary ion mass spectroscopy, infrared spectroscopy and photoluminescence. The results show that the morphology of etched a-SiC: H surface evolves with etching time. For an etching time of 20 min the surface presents a hemispherical crater, indicating that the porous SiC layer is perforated. Photoluminescence characterization of etched a-SiC: H samples for 20 min shows a high and an intense blue PL, whereas it has been shown that the PL decreases for higher etching time. Finally, a dissolution mechanism of the silicon carbide in 1HF/1K(2)S(2)O(8) solution has been proposed. (C) 2010 Elsevier B. V. All rights reserved.

引用

页码：5592 / 5595

页数：4

共 14 条

[1] Chemical etching of hot-pressed p-type polycrystalline SiC surfaces by HF/K2S2O8 solutions [J].