Growth of AlN (11(2)over-bar0) on 6H-SiC (11(2)over-bar0) by molecular-beam epitaxy

被引：32

作者：

Onojima, N ^{[1
]}

Suda, J ^{[1
]}

Matsunami, H ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2002年 / 41卷 / 12A期

关键词：

AIN; 6H-SiC; (1120) face; molecular-beam epitaxy (MBE); reflection high-energy electron diffraction (RHEED); microscopic Raman scattering spectroscopy;

D O I：

10.1143/JJAP.41.L1348

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlN epitaxial growth on 6H-SiC substrates With the (11 (2) over bar0) face, which is parallel to the (0001) direction, has been investigated. AlN epitaxial layers were grown by molecular-beam epitaxy (MBE) using elemental Al and rf plasma-excited nitrogen (N*). The surface roughness of the AlN layers was relatively small (rms roughness of 0.98 nm). From the results of reflection high-energy electron diffraction (RHEED), AlN layers on 6H-SiC (11 (2) over bar0) substrates were revealed to be grown toward the [11 (2) over bar0] direction, not toward the [0001] direction. AlN and 6H-SiC (11 (2) over bar0) had an exact epitaxial relationship, i.e.,[11 (2) over bar0](Aln) parallel to [11 (2) over bar0](SiC) and [0001](AlN) parallel to [0001](SiC). The polytype of the AlN layer was also discussed based on the results of microscopic Raman scattering spectroscopy.

引用

页码：L1348 / L1350

页数：3

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