Effect of low energy nitrogen ion irradiation on MoO3 films

被引:4
作者
Thorat, Ashish [1 ]
Tikote, Kalyani [2 ]
Bhadane, Mahesh [3 ]
Phatangare, Ambadas [1 ]
Bhoraskar, Vasant [1 ]
Dhole, Sanjay [1 ]
Dahiwale, Shailendra [1 ]
机构
[1] Savitribai Phule Pune Univ, Dept Phys, Microtron Accelerator Lab, Pune 411007, India
[2] Savitribai Phule Pune Univ, Dept Phys, Electrochem Lab, Pune 411007, India
[3] Rayat Shikshan Sansthas Dada Patil Mahavidyalaya, Dept Phys, Karjat 414402, India
关键词
-MoO3; EPD; Low energy ion irradiation; Bandgap; UV-Vis; OXIDE THIN-FILMS; SURFACE MODIFICATION; WORK FUNCTION; TRANSPARENT; DEPOSITION; RAMAN; V2O5; CVD;
D O I
10.1016/j.optmat.2022.112349
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In the present work, Molybdenum trioxide (MoO3) thin films were deposited by the electrophoretic deposition (EPD) method. Low energy ion irradiation was used to alter the materials properties of MoO3 films. Ion irradiation was carried out at a constant ion fluence of 2.16 x 1016 ions/cm2 for energies varying from 10 keV to 40 keV. The X-ray diffraction (XRD) and Raman spectroscopy revealed the orthorhombic alpha-MoO3 phase. The optical band gap was observed to change from 3.73 eV to 3.08 eV in a controlled manner due to ion irradiation. Morphology of nanobelt-like structures was seen at the highest energy of ion irradiated films. Atomic force microscopy (AFM) revealed a decrease in the surface roughness with an increase in irradiated ion energy. All results are in corroboration with each other and comprehend the process of tailoring the material properties of MoO3 thin film due to low energy ion irradiation. These tailored properties could be useful for electronic or optical device applications.
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页数:9
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