Effects of oxygen pressure on n-ZnO/p-Si heterojunctions fabricated using pulsed laser deposition - Discussion

被引：28

作者：

Qi, Hongxia ^{[1
]}

Li, Qingshan ^{[1
]}

Wang, Caifeng ^{[1
]}

Zhang, Lichun ^{[1
]}

Lv, Lei ^{[1
]}

机构：

[1] Qufu Normal Univ, Dept Phys, Qufu 273165, Peoples R China

来源：

VACUUM | 2007年 / 81卷 / 08期

关键词：

n-ZnO/p-Si heterojunction; pulsed laser deposition; band diagram;

D O I：

10.1016/j.vacuum.2006.12.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO films were prepared on p-Si substrates using pulsed laser deposition (PLD) and n-ZnO/p-Si heterojunctions were fabricated at different oxygen partial pressures. The effects of oxygen pressures on crystallinity and surface morphology of ZnO films and the I-V characteristics of n-ZnO/p-Si heterojunctions were studied. It was found that the films grown in the oxygen pressure range from 10(-5) - 10(-2) Torr were all c-axis oriented. The surface morphologies were strongly dependent on the oxygen partial pressure. The current-voltage (I-V) characteristics of the heterojunctions could be classified into two categories depending on the oxygen pressure. At low pressure (10(-5) - 10(-4) Torr), the I-V curves were similar to those of common p-n junctions. As the oxygen pressure increased to 10(-3) Torr, the I-V curves changed markedly. Based on the I-V characteristics, an energy band diagram of n-ZnO/p-Si was proposed. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：943 / 946

页数：4

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