Ultraviolet GaN light-emitting diodes grown by molecular beam epitaxy using NH3

被引：40

作者：

Grandjean, N ^{[1
]}

Massies, J ^{[1
]}

Leroux, M ^{[1
]}

Lorenzini, P ^{[1
]}

机构：

[1] CNRS, Ctr Rech Heteroepitaxie & Applicat, F-06560 Valbonne, France

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 01期

关键词：

D O I：

10.1063/1.120651

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si- and Mg-doped GaN layers were grown on c-plane sapphire substrates by molecular beam epitaxy with NH3 as the nitrogen precursor. Their optical and electrical properties were investigated by photoluminescence experiments and Hall measurements, respectively. P-type conductivity, with a net acceptor concentration of 3x10(17) cm(-3) and a mobility of 8 cm(2)/V s, was obtained. Mesa-etched light-emitting diodes were processed from p-n junctions. The turn-on voltage is 3 V and the forward current reaches 20 mA at 3.5 V. The room-temperature electroluminescence exhibits a strong emission at 390 nm. (C) 1998 American Institute of Physics.

引用

页码：82 / 84

页数：3

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