Enhanced light output in roughened GaN-based light-emitting diodes using electrodeless photoelectrochemical etching

被引：7

作者：

Hsu, Shun-Cheng ^{[1
]}

Lee, Chong-Yi

Hwang, Jung-Min

Su, Juh-Yuh

Wuu, Dong-Sing

Horng, Ray-Hua

机构：

[1] Natl Chung Hsing Univ, Dept Elect Engn, Taichung 402, Taiwan

[2] Epitech Technol Co, Dept Res & Dev, Tainan 74145, Taiwan

[3] I Shou Univ, Dept Elect Engn, Kaohsiung 840, Taiwan

[4] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[5] Natl Chung Hsing Univ, Inst Precis Engn, Taichung 402, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2006年 / 18卷 / 21-24期

关键词：

gallium nitride (GaN); light-emitting diode (LED); light extraction; photoelectrochemical (PEC);

D O I：

10.1109/LPT.2006.886862

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have demonstrated enhanced output power from roughened GaN-based light-emitting diodes (LEDs) by using electrodeless photoelectrochemical etching with a chopped source (ELPEC-CS etching). It was found that the 20-mA output power of the ELPEC-CS treated LED (with roughened surfaces on the top p-type and bottom n-type GaN surface as well as the mesa sidewall) was 1.41 and 2.57 times as high as those LEDs with a roughened p-type GaN surface and a conventional surface, respectively. The light output pattern of the ELPEC-CS treated LED was five times greater than the conventional LED at 0 degrees which was caused by the roughened GaN surface that improved the light extraction efficiency of the LED.

引用

页码：2472 / 2474

页数：3

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