Silicon Photonics and challenges for fabrication

被引:10
作者
Feilchenfeld, N. B. [1 ]
Nummy, K. [2 ]
Barwicz, T. [3 ]
Gill, D. [3 ]
Kiewra, E. [1 ]
Leidy, R. [1 ]
Orcutt, J. S. [3 ]
Rosenberg, J. [3 ]
Stricker, A. D. [1 ]
Whiting, C. [1 ]
Ayala, J. [2 ]
Cucci, B. [1 ]
Dang, D. [1 ]
Doan, T. [1 ]
Ghosal, M. [4 ]
Khater, M. [3 ]
McLean, K. [1 ]
Porth, B. [1 ]
Sowinski, Z. [2 ]
Willets, C. [1 ]
Xiong, C. [3 ]
Yu, C. [2 ]
Yum, S. [1 ]
Giewont, K. [2 ]
Green, W. M. J. [3 ]
机构
[1] GLOBALFOUNDRIES, 1000 River St, Junction, VT 05452 USA
[2] GLOBALFOUNDRIES, 2070 Route 52, Hopewell Jct, NY 12533 USA
[3] IBM TJ Watson Res Ctr, 1101 Kitchawan Rd, Yorktown Hts, NY 10598 USA
[4] GLOBALFOUNDRIES Engn, Block N1 Balsa,Manyata Embassy Business Pk, Bangalore 560045, Karnataka, India
来源
ADVANCED ETCH TECHNOLOGY FOR NANOPATTERNING VI | 2017年 / 10149卷
关键词
Silicon photonics; monolithic; 300mm; 200mm; optical proximity correction;
D O I
10.1117/12.2263472
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Silicon photonics is rapidly becoming the key enabler for meeting the future data speed and volume required by the Internet of Things. A stable manufacturing process is needed to deliver cost and yield expectations to the technology marketplace. We present the key challenges and technical results from both 200mm and 300mm facilities for a silicon photonics fabrication process which includes monolithic integration with CMOS. This includes waveguide patterning, optical proximity correction for photonic devices, silicon thickness uniformity and thick material patterning for passive fiber to waveguide alignment. The device and process metrics show that the transfer of the silicon photonics process from 200mm to 300mm will provide a stable high volume manufacturing platform for silicon photonics designs.
引用
收藏
页数:9
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