Stable p-type conductivity in B and N co-doped ZnO epitaxial thin film

被引：14

作者：

Sahu, Rajib ^{[1
,2
]}

Gholap, Hari Bhau ^{[3
]}

Mounika, Gandi ^{[4
]}

Dileep, Krishnan ^{[1
,2
]}

Vishal, Badri ^{[1
,2
]}

Ghara, Somnath ^{[2
]}

Datta, Ranjan ^{[1
,2
]}

机构：

[1] Jawaharlal Nehru Ctr Adv Sci Res, Int Ctr Mat Sci, Bangalore 560064, Karnataka, India

[2] Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India

[3] Savitribai Phule Pune Univ, Fergusson Coll, Dept Phys, Pune 411004, Maharashtra, India

[4] Indian Inst Sci, Undergratuate Program, Bangalore 560012, Karnataka, India

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2016年 / 253卷 / 03期

关键词：

ZnO; thins films; doping; p-type conductivity; density functional theory; pulsed laser deposition; PHOTOLUMINESCENCE; GAP;

D O I：

10.1002/pssb.201552625

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report on the observation of stable p-type conductivity in B and N co-doped epitaxial ZnO thin films grown by pulsed laser deposition. Films grown at higher oxygen partial pressure (similar to 10(-1) Torr) shows p-type conductivity with a carrier concentration of similar to 3 x 10(16) cm(-3). This p-type conductivity is associated with the significant decrease in defect emission peaks due to the vacancy oxygen (V-O) and Schottky type-I native defects compared to films grown at low oxygen partial pressure (similar to 10(-5) Torr). The p-type conductivity is explained with the help of density functional theory (DFT) calculation considering off-stoichiometric BN1+x in the ZnO lattice. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：504 / 508

页数：5

共 50 条

[1] First-principles study of p-type conductivity of N-Al/Ga/In co-doped ZnO
Li Honglin
Lv Yingbo
Li Jinzhu
Yu Ke
PHYSICA SCRIPTA, 2015, 90 (02)
[2] Structural, optical and electronic properties of P doped p-type ZnO thin film
Su, S. C.
Yang, X. D.
Hu, C. D.
PHYSICA B-CONDENSED MATTER, 2011, 406 (08) : 1533 - 1535
[3] Improvement of electrical and optical properties of Ga and N co-doped p-type ZnO thin films with thermal treatment
Kumar, Manoj
Lee, Byung-Teak
APPLIED SURFACE SCIENCE, 2008, 254 (20) : 6446 - 6449
[4] First-prinicples study of Mn-N co-doped p-type ZnO
Chen Li-Jing
Li Wei-Xue
Dai Jian-Feng
Wang Qing
ACTA PHYSICA SINICA, 2014, 63 (19)
[5] First-principles study on Ga-N co-doped p-type ZnO
Zhao Hongsheng
Gu Yudan
Zhang Nan
Gao Yahong
MATERIALS AND MANUFACTURING, PTS 1 AND 2, 2011, 299-300 : 498 - 502
[6] The surface effect on the p-type conductivity of Li-doped ZnO film
Si Hang
He Hai-Yan
Pan Bi-Cai
ACTA PHYSICA SINICA, 2012, 61 (15)
[7] Realization of p-type Se-N co-doped ZnO films by radio-frequency magnetron sputtering
Cai, Hui
Xu, Hongbin
Ye, Zhizhen
Huang, Jingyun
MATERIALS LETTERS, 2013, 108 : 183 - 185
[8] Ferromagnetism in transparent thin film of Co-doped ZnO
Su, Xueqiong
Wang, Li
Chen, Jiangbo
Wan, Xiaojing
Kong, Le
OPTOELECTRONIC DEVICES AND INTEGRATION III, 2010, 7847
[9] The origin of p-type conductivity in P-doped ZnO
Lee, Woo-Jin
Kang, Joongoo
Chang, K. J.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2007, 50 (03) : 602 - 607
[10] X-ray photoelectron spectroscopy study of Al- and N- co-doped p-type ZnO thin films
Yuan, G. D.
Ye, Z. Z.
Huang, J. Y.
Zhu, L. P.
Perkins, C. L.
Zhang, S. B.
JOURNAL OF CRYSTAL GROWTH, 2009, 311 (08) : 2341 - 2344

← 1 2 3 4 5 →