Quantum confinement in germanium nanocrystals

被引:293
作者
Niquet, YM [1 ]
Allan, G [1 ]
Delerue, C [1 ]
Lannoo, M [1 ]
机构
[1] Dept Inst Super Elect Nord, Inst Elect & Microelect Nord, F-59046 Lille, France
关键词
D O I
10.1063/1.1289659
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electronic structure of Ge nanocrystals is studied using a sp(3) tight binding description. Analytical laws for the confinement energies, valid over the whole range of sizes, are derived. We validate our results with ab initio calculations in the local density approximation for smaller clusters. Comparing to experimental data, we conclude that, similar to the case of silicon: (a) the blue-green photoluminescence (PL) of Ge nanocrystals comes from defects in the oxide and (b) the size dependent PL in the near infrared probably involves a deep trap in the gap of the nanocrystals. We predict that the radiative lifetimes remain long in spite of the small difference (0.14 eV) between direct and indirect gaps of bulk Ge. (C) 2000 American Institute of Physics. [S0003-6951(00)04134-6].
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页码:1182 / 1184
页数:3
相关论文
共 31 条
[1]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[2]   Raman characterization of germanium nanocrystals in amorphous silicon oxide films synthesized by rapid thermal annealing [J].
Choi, WK ;
Ng, V ;
Ng, SP ;
Thio, HH ;
Shen, ZX ;
Li, WS .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (03) :1398-1403
[3]   Light emission from germanium nanoparticles formed by ultraviolet assisted oxidation of silicon-germanium [J].
Craciun, V ;
BoulmerLeborgne, C ;
Nicholls, EJ ;
Boyd, IW .
APPLIED PHYSICS LETTERS, 1996, 69 (11) :1506-1508
[4]   Excitonic and quasiparticle gaps in Si nanocrystals [J].
Delerue, C ;
Lannoo, M ;
Allan, G .
PHYSICAL REVIEW LETTERS, 2000, 84 (11) :2457-2460
[5]   THEORETICAL ASPECTS OF THE LUMINESCENCE OF POROUS SILICON [J].
DELERUE, C ;
ALLAN, G ;
LANNOO, M .
PHYSICAL REVIEW B, 1993, 48 (15) :11024-11036
[6]   SIZE DEPENDENCE OF BAND-GAPS IN SILICON NANOSTRUCTURES [J].
DELLEY, B ;
STEIGMEIER, EF .
APPLIED PHYSICS LETTERS, 1995, 67 (16) :2370-2372
[7]   CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS [J].
DRESSELHAUS, G ;
KIP, AF ;
KITTEL, C .
PHYSICAL REVIEW, 1955, 98 (02) :368-384
[8]   Visible photoluminescence from Ge nanocrystal embedded into a SiO2 matrix fabricated by atmospheric pressure chemical vapor deposition [J].
Dutta, AK .
APPLIED PHYSICS LETTERS, 1996, 68 (09) :1189-1191
[9]   ABSORPTION AND EMISSION OF LIGHT IN NANOSCALE SILICON STRUCTURES [J].
HYBERTSEN, MS .
PHYSICAL REVIEW LETTERS, 1994, 72 (10) :1514-1517
[10]   Empirical spds* tight-binding calculation for cubic semiconductors: General method and material parameters [J].
Jancu, JM ;
Scholz, R ;
Beltram, F ;
Bassani, F .
PHYSICAL REVIEW B, 1998, 57 (11) :6493-6507