Unexpected significant increase in bulk conductivity of a dielectric arising from charge injection

被引:12
作者
Wang, Jian-Jun [1 ]
Bayer, Thorsten J. M. [1 ]
Wang, Rui [1 ]
Carter, Jared J. [1 ]
Randall, Clive A. [1 ]
Chen, Long-Qing [1 ]
机构
[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
基金
美国国家科学基金会;
关键词
DC ELECTRICAL DEGRADATION; PEROVSKITE-TYPE TITANATES; RESISTANCE DEGRADATION; SINGLE-CRYSTALS; RECOMBINATION; MOBILITY; MODEL;
D O I
10.1063/1.4990677
中图分类号
O59 [应用物理学];
学科分类号
摘要
Charge injection is a common phenomenon in heterostructures or devices containing metal-insulator interfaces under a voltage bias ranging from dielectric capacitors to electroluminescent and lasing devices. It is generally believed that charge injection only significantly increases the conductivity near the interfacial region or in capacitors with very thin dielectric layers. In this work, the impact of charge injection on bulk conductivity of a 0.5 mm thick Fe-doped SrTiO3 single crystal is investigated with a combination of experimental impedance measurements and computational modelling. It is found that the interfacial charge injection may increase the predicted bulk conductivity of a dielectric by more than one order of magnitude as a consequence of Schottky barrier height lowering. Published by AIP Publishing.
引用
收藏
页数:5
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