Effect of annealing temperature on structural and electrical properties of Al/Nb-doped TiO2 Schottky diodes on Pt-Si substrates

被引：3
作者：
Yu, Shihui [1 ,2 ]
Zhang, Chunmei [1 ,2 ]
Yang, Pan [1 ,2 ]
Wu, Muying [3 ]
Sun, Yongtao [4 ,5 ]
Li, Lingxia [1 ,2 ]
机构：
[1] Tianjin Univ, Sch Microelect, Tianjin 300072, Peoples R China
[2] Tianjin Univ, Tianjin Key Lab Imaging & Sensing Microelect Tech, Tianjin 300072, Peoples R China
[3] Dongguan Univ Technol, Sch Elect Engn & Intelligentizat, Dongguan 523808, Guangdong, Peoples R China
[4] Tianjin Univ, Dept Mech, Tianjin 30050, Peoples R China
[5] Tianjin Univ, Tianjin Key Lab Nonlinear Dynam & Control, Tianjin 30050, Peoples R China
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2019年 / 30卷 / 19期
基金：
中国国家自然科学基金;
关键词：
THIN-FILMS; PERFORMANCE; VOLTAGE; ENHANCEMENT; ELECTRODES; DEFECTS; IV;
D O I：
10.1007/s10854-019-02183-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The Nb-doped TiO2 (NTO) thin films were deposited on Pt-coated Si substrates for fabrication of Al/NTO Schottky diodes using RF magnetron sputtering technique. The effects of annealing temperature on the microstructure, surface morphological and electrical properties are systematically investigated. X-ray diffraction pattern shows that the crystallinity of NTO thin films can be improved by adjusting the annealing temperature. The surface morphological analysis shows that the grain size and roughness can be affected by the annealing temperature. According to I-V characteristics, the ideal factor, barrier height and series resistance of Al/NTO Schottky diodes calculated by various methods are consistent well. The ideal factor and series resistance decrease with annealing temperature rising from 200 to 600 degrees C. When the NTO thin films are annealed at 600 degrees C, the Al/NTO Schottky diodes have good rectifying behaviors with an ideal factor of 4.97, a Schottky barrier height of 1.04 eV and a relatively low series resistance of 235 omega. These results indicate that the prepared Al/NTO Schottky diodes have potential application prospects in rectifying devices.
引用
收藏
页码：18287 / 18295
页数：9
相关论文
共 51 条
[1]   Fabrication and characterization of Pd/Cu doped ZnO/Si and Ni/Cu doped ZnO/Si Schottky diodes [J].
Agarwal, Lucky ;
Singh, Brijesh Kumar ;
Tripathi, Shweta ;
Chakrabarti, P. .
THIN SOLID FILMS, 2016, 612 :259-266
[2]   Investigation of defects in indium doped TiO2 thin films using electrical and optical techniques [J].
Al Saqri, Noor Alhuda ;
Mondal, Aniruddha ;
Felix, Jorlandio Francisco ;
Gobato, Yara Galvao ;
Gordo, Vanessa Orsi ;
Albalawi, Hind ;
Jameel, Dler ;
Alghamdi, Haifa ;
Al Mashary, Faisal ;
Taylor, David ;
Abd El-Sadek, Mahmmoud S. ;
Henini, Mohamed .
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 698 :883-891
[3]   Chemical Vapor Deposition of Photocatalytically Active Pure Brookite TiO2 Thin Films [J].
Alotaibi, Abdullah M. ;
Sathasivam, Sanjayan ;
Williamson, Benjamin A. D. ;
Kafizas, Andreas ;
Sotelo-Vazquez, Carlos ;
Taylor, Alaric ;
Scanlon, David O. ;
Parkin, Ivan P. .
CHEMISTRY OF MATERIALS, 2018, 30 (04) :1353-1361
[4]   Electrical characteristics of Au/n-GaAs Schottky barrier diodes with and without SiO2 insulator layer at room temperature [J].
Altuntas, H. ;
Altindal, S. ;
Oezcelik, S. ;
Shtrikman, H. .
VACUUM, 2009, 83 (07) :1060-1065
[5]   Size and strain dependent anatase to rutile phase transition in TiO2 due to Si incorporation [J].
Anita ;
Yadav, Arun Kumar ;
Khatun, Nasima ;
Kumar, Sunil ;
Tseng, Chuan-Ming ;
Biring, Sajal ;
Sen, Somaditya .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2017, 28 (24) :19017-19024
[6]   Electrical Behavior of MBE Grown Interfacial Misfit GaSb/GaAs Heterostructures With and Without Te-Doped Interfaces [J].
Aziz, Mohsin ;
Felix, Jorlandio Francisco ;
Al Saqri, Noor ;
Jameel, Dler ;
Al Mashary, Faisal Saleh ;
Albalawi, Hind Mohammed ;
Alghamdi, Haifaa Mohammed Abdullah ;
Taylor, David ;
Henini, Mohamed .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (12) :3980-3986
[7]   Power high-voltage and fast response Schottky barrier diamond diodes [J].
Blank, V. D. ;
Bormashov, V. S. ;
Tarelkin, S. A. ;
Buga, S. G. ;
Kuznetsov, M. S. ;
Teteruk, D. V. ;
Kornilov, N. V. ;
Terentiev, S. A. ;
Volkov, A. P. .
DIAMOND AND RELATED MATERIALS, 2015, 57 :32-36
[8]   Electronic properties of Al/MoO3/p-InP enhanced Schottky barrier contacts [J].
Chen, Jun ;
Lv, Jiabing ;
Wang, Qingsong .
THIN SOLID FILMS, 2016, 616 :145-150
[9]   EXTRACTION OF SCHOTTKY DIODE PARAMETERS FROM FORWARD CURRENT-VOLTAGE CHARACTERISTICS [J].
CHEUNG, SK ;
CHEUNG, NW .
APPLIED PHYSICS LETTERS, 1986, 49 (02) :85-87
[10]   TEMPERATURE-DEPENDENCE OF IV AND C-V CHARACTERISTICS OF NI/N-CDF2 SCHOTTKY-BARRIER TYPE DIODES [J].
COVA, P ;
SINGH, A .
SOLID-STATE ELECTRONICS, 1990, 33 (01) :11-19
123456