Wafer bonding for use in mechanically stacked multi-bandgap cells

被引：6

作者：

Sharps, PR ^{[1
]}

Timmons, ML ^{[1
]}

Hills, JS ^{[1
]}

Gray, JL ^{[1
]}

机构：

[1] Res Triangle Inst, Res Triangle Pk, NC 27709 USA

来源：

CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997 | 1997年

关键词：

D O I：

10.1109/PVSC.1997.654231

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Two and three junction monolithic two-terminal cells have been developed that have 1-sun, AMO efficiencies of greater than 25%. In order to reach 1-sun efficiencies of 30% and greater, cells with more junctions are required. Mechanically stacking junctions with different band gaps provides a means of developing such a cell. We propose a four-junction, mechanically stacked cascade cell structure that projects to a 34.8% AMO efficiency. Wafer bonding provides a means of mechanically joining semiconductor materials with different lattice constants. We present optical, electrical, and mechanical data on wafer bonding GaAs and InP substrates. The data indicate that wafer bonding can be used to develop a four-junction device.

引用

页码：895 / 898

页数：4