Enhanced Aluminum doping profile in 4H-SiC by wet-chemical laser doping

被引：0
作者：
Jadoon, Atif Mehmood
Ji, Lingfei [1 ]
Lin, Zhenyuan
机构：
[1] Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
来源：
14TH NATIONAL CONFERENCE ON LASER TECHNOLOGY AND OPTOELECTRONICS (LTO 2019) | 2019年 / 11170卷
基金：
中国国家自然科学基金; 国家重点研发计划;
关键词：
SiC; Excimer Laser; doping; AlCl3; solution; carrier concentration; ACTIVATION; AL;
D O I：
10.1117/12.2537604
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, enhancement of Aluminum doping profile in semi-insulating 4H-SiC by using Eximer laser in AlCl3 aqueous solution is focused. Several active parameters like number of shots, laser power and dopants solution density affect the doping mechanism. Laser doping with increase of AlCl3 solution concentration from 28 to 36 wt.% results in more efficient doping with merging features like better ohmic contact formation having ideal symmetry factor. Hall Effect measurement using Van der Pauw method show that laser produces a highly doped p-type layer with increasing carrier concentration from 10(12) /cm(2) to a maximum 10(15)/cm(2) by tuning parameter. Current-Voltage characteristics of modified region show the ohmic behavior with reduction in resistance. UV spectrometer absorption tangent line shifts from 375 nm to 401 nm indicating that Al impurity has been introduced in 4H-SiC.
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页数：6
相关论文
共 16 条
[1]  
Bet S, 2007, ACTA MATER, V55, P6816, DOI 10.1016/j.actamat.2007.08.039
[2]   Increased doping depth of Al in wet-chemical laser doping of 4H-SiC by expanding laser pulse [J].
Ikeda, Akihiro ;
Marui, Daichi ;
Sumina, Rikuho ;
Ikenoue, Hiroshi ;
Asano, Tanemasa .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 70 :193-196
[3]   Nitrogen doping of 4H-SiC by KrF excimer laser irradiation in liquid nitrogen [J].
Ikeda, Akihiro ;
Marui, Daichi ;
Ikenoue, Hiroshi ;
Asano, Tanemasa .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (04)
[4]   SITE EFFECT ON THE IMPURITY LEVELS IN H-4, 6H, AND 15R SIC [J].
IKEDA, M ;
MATSUNAMI, H ;
TANAKA, T .
PHYSICAL REVIEW B, 1980, 22 (06) :2842-2854
[5]   Ionization energies of phosphorus and nitrogen donors and aluminum acceptors in 4H silicon carbide from the donor-acceptor pair emission -: art. no. 241201 [J].
Ivanov, IG ;
Henry, A ;
Janzén, E .
PHYSICAL REVIEW B, 2005, 71 (24)
[6]   Temperature and doping dependencies of electrical properties in Al-doped 4H-SiC epitaxial layers [J].
Koizumi, Atsushi ;
Suda, Jun ;
Kimoto, Tsunenobu .
JOURNAL OF APPLIED PHYSICS, 2009, 106 (01)
[7]   DEEP CENTERS AND ELECTROLUMINESCENCE IN 4H-SIC DIODES WITH A P-TYPE BASE REGION [J].
KUZNETSOV, NI ;
ZUBRILOV, AS .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 29 (1-3) :181-184
[8]   Low-temperature oxidation of 4H-SiC using oxidation catalyst SrTi1-xMgxO3-δ [J].
Li, Li ;
Ikeda, Akihiro ;
Asano, Tanemasa .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (10)
[9]   Band-gap energy estimation from diffuse reflectance measurements on sol-gel and commercial TiO2: a comparative study [J].
Lopez, Rosendo ;
Gomez, Ricardo .
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2012, 61 (01) :1-7
[10]   Aluminum doping of 4H-SiC by irradiation of excimer laser in aluminum chloride solution [J].
Marui, Daichi ;
Ikeda, Akihiro ;
Nishi, Koji ;
Ikenoue, Hiroshi ;
Asano, Tanemasa .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (06)
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