Localized Statistical 3D Thermal Analysis Considering Electro-Thermal Coupling

被引：2

作者：

Luo, Zuying ^{[1
]}

Fan, Jeffrey ^{[2
]}

Tan, Sheldon X. -D. ^{[3
]}

机构：

[1] Beijing Normal Univ, Dept Elect, Beijing 100875, Peoples R China

[2] Florida Int Univ, Dept Elect & Comp Engn, Miami, FL USA

[3] Univ Calif Riverside, Dept Elect Engn, Riverside, CA USA

来源：

ISCAS: 2009 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-5 | 2009年

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/ISCAS.2009.5117999

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, we propose a novel method for analyzing fewer hot spots in a chip. The method, called SNSOR (Single-Node Successive Over Relaxation), is based on a novel localized relaxed iterative approach to perform statistical analysis on one hot spot at a time. Based on SNSOR, we propose an approximation method, called ET-SNSOR (Electro-Thermal SNSOR), to deal with the electro-thermal coupling (ETC) effects. ET-SNSOR first uses the iterative method to update correlations from ETC, and then computes standard temperature deviations for hot spots, according to ETC and updated correlations. Experiments show that ET-SNSOR is three orders of magnitude faster than the Monte-Carlo method with small errors (less than 4.76% on maximum). It only takes an average of 0.18 second to analyze one hot spot statistically for a large test case of 1.3M nodes with ETC effects.

引用

页码：1289 / +

页数：2

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