The influence of Ni layer and thickness of AZO layers on the optoelectronic properties of AZO/Ni/AZO tri-layer deposited at room temperature

被引:27
作者
Kumar, M. Melvin David [1 ,2 ]
Baek, Seon Mi [2 ]
Kim, Joondong [1 ,2 ]
机构
[1] Incheon Natl Univ, Dept Elect Engn, Inchon 406772, South Korea
[2] Incheon Natl Univ, Photoelect & Energy Device Applicat Lab, Inchon 406772, South Korea
关键词
AZO film; Ni-insertion; AZO/Ni/AZO tri-layer; Carrier mobility; Optoelectronic properties; TRANSPARENT ELECTRODES; FILMS; OXIDE;
D O I
10.1016/j.matlet.2014.09.001
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A thin Ni film was employed to improve electrical performances of aluminum-doped-zinc-oxide (AZO). AZO thickness was modulated to find an optimum combination for AZO/Ni/AZO tri-layer. A combination of AZO/Ni/AZO (50 nm/5 nm/50 nm) substantially improves carrier mobility 34.5 cm(2) V-1 S-1 from 1.96 cm(2) V-1 S-1 bilayer AZO/AZO (50 nm/50 nm) film. Although, Ni-insertion sacrifices the optical transmittance, the AZO/Ni/AZO structure effectively enhances the figure of merit (FOM) values. We report that the optical and electrical properties of AZO layers could be enriched by embedding a thin Ni film in AZO layers with tuning the thickness of AZO layers. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:132 / 135
页数:4
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