2.5 GHz CMOS dual-modulus prescaler for RF frequency synthesizer

被引：0

作者：

Yang, WR ^{[1
]}

Cao, JL ^{[1
]}

Ran, F ^{[1
]}

Wang, J ^{[1
]}

机构：

[1] Shanghai Univ, Microelect Res Dev Ctr, Shanghai 200072, Peoples R China

来源：

2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-speed dual-modulus divide-by-32/33 prescaler has been developed in a 0.25 in CMOS technology. The source-coupled logic (SCL) structure is used to reduce the switching noise and to ameliorate the power-speed tradeoff. The proposed prescaler can operate at high frequency with a low-power consumption. Based on the 2.5V 0.25 in CMOS model, simulation results indicate that the maximum input frequency of the prescaler is up to 3.2 GHz. Running at a power supply of 2.5V, the circuit consumes only 4.6 mA at input frequency of 2.5 GHz.

引用

页码：1547 / 1550

页数：4

共 50 条

[41] Design and Testing Issues of a High-Speed SOI CMOS Dual-Modulus Prescaler for Radiation Tolerant Frequency Synthesizers [J].

Sotskov, D. I. ;

Elesin, V. V. ;

Amburkin, K. M. ;

Nazarova, G. N. ;

Usachev, N. A. ;

Nikiforov, A. Y. .

2017 IEEE 30TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL), 2017, :329-332

[42] 12 GHZ GAAS J-FET 256/258 DUAL-MODULUS PRESCALER IC [J].

WADA, M ;

KAWASAKI, H ;

HIDA, Y ;

OKUBORA, A ;

KASAHARA, J .

GAAS IC SYMPOSIUM /: TECHNICAL DIGEST 1989, 1989, :109-112

[43] DUAL-MODULUS SYNTHESIZER NEEDS LITTLE POWER [J].

HATCHETT, J .

ELECTRONICS, 1983, 56 (11) :150-150

[44] 4 GHz CMOS multiple modulus prescaler [J].

Ahola, Rami ;

Halonen, Kari .

Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems, 1998, 2 :323-326

[45] A low-power GaAs MESFET dual-modulus prescaler [J].

Kanan, R ;

Hochet, B ;

Kaess, F ;

Declercq, M .

ISCAS '98 - PROCEEDINGS OF THE 1998 INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-6, 1998, :A193-A196

[46] A 6-GHz dual-modulus prescaler using 180nm SiGe technology [J].

Institute of VLSI Design, Zhejiang University, Hangzhou, China ;

不详 ;

不详 .

Int. Symp. Integr. Circuits, ISIC, 2011, (436-439)

[47] 30 GHz monolithic voltage-controlled oscillator with dual-modulus prescaler in SiGe bipolar technology [J].

Ritzberger, G ;

Knapp, H ;

Böck, J ;

Aufinger, K .

PROCEEDINGS OF THE 2002 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2002, :220-223

[48] High-speed dual-modulus prescaler architecture for programmable digital frequency dividers [J].

Tournier, É ;

Sié, M ;

Graffeuil, J .

ELECTRONICS LETTERS, 2001, 37 (24) :1433-1434

[49] A low-power 17-GHz 256/257 dual-modulus prescaler fabricated in a 130-nm CMOS process [J].

Ding, Y ;

Kenneth, KO .

2005 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2005, :465-468

[50] Dual-modulus 127/128 FOM enhanced prescaler design in 0.35-μm CMOS technology [J].

Rana, RS .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2005, 40 (08) :1662-1670

← 1 2 3 4 5 →