MBE growth and characterization of MnP and Ge nanowhiskers

被引：0

作者：

Bouravleuv, A. D. ^{[1
,2
]}

Minami, K. ^{[1
]}

Sato, Y. ^{[1
]}

Ishibashi, T. ^{[1
]}

Sato, K. ^{[1
]}

机构：

[1] Tokyo Univ Agr & Technol, Grad Sch Engn, Tokyo 1848588, Japan

[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷

关键词：

nanowhiskers; molecular beam epitaxy; magnetic propeties;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ge and MnP nanowhiskers have been grown by molecular beam epitaxy (MBE) concurrently on InP and GaAs substrates. The growth of MnP nanowhiskers appears to be caused by catalytic free growth mechanism, whereas the growth of Ge nanowhiskers is found to be amenable to vapour-liquid-solid (VLS) mechanism of growth. The measurements of temperature and magnetic field dependences of magnetization have shown that the samples containing mostly Ge nanowhiskers exhibit ferromagnetic behaviour up to room temperature.

引用

页码：57 / +

页数：2

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