Leakage mechanism in a porous organic low-k polymer

被引：6
|
作者：
Li, YL
Tökei, Z
Maex, K
机构：
[1] IMEC, B-3001 Heverlee, Belgium
[2] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Louvain, Belgium
来源：
MICROELECTRONIC ENGINEERING | 2004年 / 76卷 / 1-4期
关键词：
leakage; Frenkel-Poole emission; porous organic low-k polymer; barrier integrity; conduction mechanism;
D O I：
10.1016/j.mee.2004.07.016
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Leakage mechanism of a copper single damascene structure with a porous organic low-k polymer as the inter-metal dielectric between 1 and 4 mV/cm is investigated. Constant-rate voltage ramp is the main tool for investigation. Experiments were conducted between 25 and 250 degreesC. Passivated damascene structures with fully dense and porous copper diffusion barriers were investigated. If a fully dense barrier is used, the leakage mechanism is believed to be Frenkel-Poole emission. For a porous diffusion barrier above 175 degreesC, this mechanism is altered by copper drift diffusion. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：20 / 24
页数：5
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