Effect of the change in the load resistance on the high voltage pulse transformer of the intense electron-beam accelerators

被引:11
作者
Cheng, Xin-bing [1 ]
Liu, Jin-liang [1 ]
Qian, Bao-liang [1 ]
Zhang, Yu [1 ]
Zhang, Hong-bo [1 ]
机构
[1] Natl Univ Def Technol, Coll Photoelect Sci & Engn, Changsha 410073, Hunan, Peoples R China
基金
中国国家自然科学基金;
关键词
Electric potential - Electron beams - Pulse transformers;
D O I
10.1063/1.3263902
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A high voltage pulse transformer (HVPT) is usually used as a charging device for the pulse forming line (PFL) of intense electron-beam accelerators (IEBAs). Insulation of the HVPT is one of the important factors that restrict the development of the HVPT. Until now, considerable effort has been focused on minimizing high field regions to avoid insulation breakdown between windings. Characteristics of the HVPT have been widely discussed to achieve these goals, but the effects of the PFL and load resistance on HVPT are usually neglected. In this paper, a HVPT is used as a charging device for the PFL of an IEBA and the effect of the change in the load resistance on the HVPT of the IEBA is presented. When the load resistance does not match the wave impedance of the PFL, a high-frequency bipolar oscillating voltage will occur, and the amplitude of the oscillating voltage will increase with the decrease in the load resistance. The load resistance approximates to zero and the amplitude of the oscillating voltage is much higher. This makes it easier for surface flashover along the insulation materials to form and decrease the lifetime of the HVPT. (C) 2009 American Institute of Physics. [doi:10.1063/1.3263902]
引用
收藏
页数:7
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