Single-electron tunneling devices as a possible dc current standard

被引：0
作者：
Furlan, M [1 ]
Eichenberger, AL
Kach, E
Jeanneret, B
Jeckelmann, B
机构：
[1] Swiss Fed Off Metrol, CH-3084 Wabern, Switzerland
[2] ETHZ Honggerberg, Solid State Phys Lab, CH-8093 Zurich, Switzerland
来源：
HELVETICA PHYSICA ACTA | 1998年 / 71卷
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Control of the tunneling rate of single electrons is possible in systems of small tunnel junctions showing a Coulomb blockade. An external gate potential may be appropriately set to allow the transfer of an exactly given number of charges. With an rf drive at the gate, the de current is consequently determined by the rf frequency. We are currently investigating the feasibility of a new current standard, based on nanometer sized single-electron tunneling devices. A very brief status report is given, and first experimental results on the Coulomb blockade are presented.
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页码：5 / 6
页数：2
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