Single-electron tunneling devices as a possible dc current standard

被引：0
作者：
Furlan, M [1 ]
Eichenberger, AL
Kach, E
Jeanneret, B
Jeckelmann, B
机构：
[1] Swiss Fed Off Metrol, CH-3084 Wabern, Switzerland
[2] ETHZ Honggerberg, Solid State Phys Lab, CH-8093 Zurich, Switzerland
来源：
HELVETICA PHYSICA ACTA | 1998年 / 71卷
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Control of the tunneling rate of single electrons is possible in systems of small tunnel junctions showing a Coulomb blockade. An external gate potential may be appropriately set to allow the transfer of an exactly given number of charges. With an rf drive at the gate, the de current is consequently determined by the rf frequency. We are currently investigating the feasibility of a new current standard, based on nanometer sized single-electron tunneling devices. A very brief status report is given, and first experimental results on the Coulomb blockade are presented.
引用
收藏
页码：5 / 6
页数：2
相关论文
共 50 条
  • [21] Charging and heating effects in a system of coupled single-electron tunneling devices
    Krupenin, VA
    Lotkhov, SV
    Scherer, H
    Weimann, T
    Zorin, AB
    Ahlers, FJ
    Niemeyer, J
    Wolf, H
    PHYSICAL REVIEW B, 1999, 59 (16) : 10778 - 10784
  • [22] OPTIMIZATION OF ISLAND SIZE IN SINGLE-ELECTRON TUNNELING DEVICES - EXPERIMENT AND THEORY
    VERBRUGH, SM
    BENHAMADI, ML
    VISSCHER, EH
    MOOIJ, JE
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (04) : 2830 - 2836
  • [23] Design of a Hamming neural network based on single-electron tunneling devices
    Guimaraes, JG
    Nóbrega, LM
    da Costa, JC
    MICROELECTRONICS JOURNAL, 2006, 37 (06) : 510 - 518
  • [24] Influence of nanomechanical properties on single-electron tunneling: A vibrating single-electron transistor
    Boese, D
    Schoeller, H
    EUROPHYSICS LETTERS, 2001, 54 (05): : 668 - 674
  • [25] Analysis of Co-Tunneling Current in Fullerene Single-Electron Transistor
    KhademHosseini, Vahideh
    Dideban, Daryoosh
    Ahmadi, MohammadTaghi
    Ismail, Razali
    BRAZILIAN JOURNAL OF PHYSICS, 2018, 48 (04) : 406 - 410
  • [26] The anomalous negative acoustoelectric current in single-electron transport devices
    Song, L.
    Chen, S. W.
    He, J. H.
    Zhang, C. Y.
    Lu, C.
    Gao, J.
    SOLID STATE COMMUNICATIONS, 2010, 150 (5-6) : 292 - 296
  • [27] Analysis of Co-Tunneling Current in Fullerene Single-Electron Transistor
    Vahideh KhademHosseini
    Daryoosh Dideban
    MohammadTaghi Ahmadi
    Razali Ismail
    Brazilian Journal of Physics, 2018, 48 : 406 - 410
  • [28] Classification of single-electron devices
    Abramov, II
    Novik, EG
    SEMICONDUCTORS, 1999, 33 (11) : 1254 - 1259
  • [29] Irreversibility on the Level of Single-Electron Tunneling
    Kueng, B.
    Roessler, C.
    Beck, M.
    Marthaler, M.
    Golubev, D. S.
    Utsumi, Y.
    Ihn, T.
    Ensslin, K.
    PHYSICAL REVIEW X, 2012, 2 (01): : 1 - 6
  • [30] Simulation of single-electron tunneling circuits
    Gerousis, CP
    Goodnick, SM
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2002, 233 (01): : 113 - 126
12345