Cesium accumulation at CsB3O5 optical surface

被引:23
|
作者
Atuchin, VV
Pokrovsky, LD
Kesler, VG
Maklakova, NY
Yoshimura, M
Ushiyama, N
Matsui, T
Kamimura, K
Mori, Y
Sasaki, T
机构
[1] Russian Acad Sci, Inst Semicond Phys, Lab Opt Mat & Struct, Siberian Branch, Novosibirsk 630090, Russia
[2] Russian Acad Sci, Inst Semicond Phys, Ctr Tech, Novosibirsk 630090, Russia
[3] Inst Mineral & Petrog, Lab Crystal Growth, Novosibirsk 630090, Russia
[4] Osaka Univ, Dept Elect Engn, Osaka 5650871, Japan
关键词
cesium triborate; optical surface; cesium accumulation;
D O I
10.1016/S0925-3467(02)00322-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Structure and element composition of polished CsB3O5 surface have been studied. It has been shown that crystal surface is covered by thick layer (>50 Angstrom) of amorphous phase. This surface compound contains Cs, B and O and contaminated by hydrocarbons adsorbed on the surface. Element depth profiling produced by ion sputtering reveals quick and monotonic drop of C signal accompanied by increases of B and O signals with stabilization at depths higher than similar to20 Angstrom. The distribution of Cs over depth is irregular, top surface cesium content is similar to30% higher then that achieved for higher sputtering times. Being removed by sputtering, this top surface layer enriched by Cs is restored by few hours keeping at 24 degreesC in vacuum or air. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:377 / 383
页数:7
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