Porous silicon localization for implementation in matrix biosensors

被引:5
作者
Benilov, A.
Cabrera, M.
Skryshevsky, V.
Martin, J.-R.
机构
[1] Kyiv Taras Shevchenko Natl Univ, UA-01033 Kiev, Ukraine
[2] Ecole Cent Lyon, Lab Elect Optoelect & Microsyst, F-69131 Ecully, France
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2007年 / 139卷 / 2-3期
关键词
porous silicon; light-assisted etching; matrix DNA sensor;
D O I
10.1016/j.mseb.2007.02.013
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The search of appropriate substrates and methods of surface DNA functionalisation is one of the important tasks of semiconductor biosensors. In this work we develop a method of light-assisted porous silicon etching in order to localize porous silicon spots on silicon substrate for matrix fluorophore-labeled DNA sensors implementation. The principal difference of porous spots localization proposed is considered for n- and p-type Si substrates under the condition of supplementary illumination. The tuning of the porous profile via applying of lateral electric field is proposed and experimentally proved. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:221 / 225
页数:5
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