Surface activation and planarization with gas cluster ion beam for wafer bonding

被引：4
作者：
Toyoda, N. [1 ]
Sasaki, T. [1 ]
Yamada, I. [1 ]
Suga, T. [2 ]
机构：
[1] Univ Hyogo, Grad Sch Engn, Himeji, Hyogo 6712280, Japan
[2] Univ Tokyo, Sch Engn, Bunkyo Ku, Tokyo 1130033, Japan
来源：
SEMICONDUCTOR WAFER BONDING: SCIENCE, TECHNOLOGY AND APPLICATIONS 14 | 2016年 / 75卷 / 09期
关键词：
D O I：
10.1149/07509.0009ecst
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, preliminary irradiation effects of glancing incidence gas cluster ion beam (GCIB) for surface activated bonding are reported. Unique irradiation effects of GCIB, such as low-damage irradiation and surface smoothing effects, might be beneficial for surface activated bonding. From XPS analysis, Ar-GCIB irradiation at 70 degrees removed native oxide on Si(100) substrate efficiently. On the contrary, mixing of native oxide by normal incidence GCIB occurred, which caused residual oxide layer formation. The surface roughness at oblique incidence showed lowest value (Ra similar to 0.5 nm) without ripple formations. In addition, Cu-Cu bonding were demonstrated as preliminary results of wafer bonding with GCIB.
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收藏
页码：9 / 13
页数：5
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