Effects of hydrogen on carbon nanotube formation in CH4/H2 plasmas

被引:64
作者
Okita, Atsushi
Suda, Yoshiyuki
Oda, Akinori
Nakamura, Junji
Ozeki, Atsushi
Bhattacharyya, Krishnendu
Sugawara, Hirotake
Sakai, Yosuke
机构
[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, Kita Ku, Sapporo, Hokkaido 0600814, Japan
[2] Nagoya Inst Technol, Grad Sch Engn, Showa Ku, Nagoya, Aichi 4668555, Japan
[3] Univ Tsukuba, Inst Mat Sci, Tsukuba, Ibaraki 3058573, Japan
关键词
D O I
10.1016/j.carbon.2007.03.022
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Carbon nanotubes (CNTs) were synthesized using CH4/H-2 plasmas and plasmas simulated using a one-dimensional fluid model. The thinnest and longest CNTs with the highest number density were obtained using CH4/H-2 = 27/3 sccm at 10 Torr. These conditions allowed CNTs to grow for 90 min without any meaningful loss of catalyst activity. However, an excess H-2 Supply to the CH4/H-2 mixture plasma made the diameter distribution of the CNTs wider and the yield lower. Hydrogen concentration is considered to affect catalyst particle size and activity during the time interval before starting CNT growth (=incubation period). With CH4/H-2 = 27/3 sccm for a growth time of 10 min efficient CNT growth was achieved because the amount of carbon atoms in the CNTs and that calculated from simulation showed good agreement. The effect of hydrogen etching on CNTs was analyzed by scanning electron microscopy and X-ray photoelectron spectroscopy by observing CNTs treated by H-2 plasma after CNT growth. It was confirmed that (a) multi-walled CNTs were not etched by the H-2 plasma, (b) the C 1s XPS spectra of the CNTs showed no chemical shift after the treatment, and (c) C-H bonds were produced in CNTs during their growth. (c) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1518 / 1526
页数:9
相关论文
共 39 条
  • [1] An integrated logic circuit assembled on a single carbon nanotube
    Chen, ZH
    Appenzeller, J
    Lin, YM
    Sippel-Oakley, J
    Rinzler, AG
    Tang, JY
    Wind, SJ
    Solomon, PM
    Avouris, P
    [J]. SCIENCE, 2006, 311 (5768) : 1735 - 1735
  • [2] Growth of multiwall carbon nanotubes in an inductively coupled plasma reactor
    Delzeit, L
    McAninch, I
    Cruden, BA
    Hash, D
    Chen, B
    Han, J
    Meyyappan, M
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 91 (09) : 6027 - 6033
  • [3] Inductively coupled Ar/CH4/H2 plasmas for low-temperature deposition of ordered carbon nanostructures
    Denysenko, IB
    Xu, S
    Long, JD
    Rutkevych, PP
    Azarenkov, NA
    Ostrikov, K
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 95 (05) : 2713 - 2724
  • [4] DRESSELHAUS MS, 2001, CARBON NANOTUBES SYN, P287
  • [5] Franklin NR, 2000, ADV MATER, V12, P890, DOI 10.1002/1521-4095(200006)12:12<890::AID-ADMA890>3.0.CO
  • [6] 2-K
  • [7] Shape-engineerable and highly densely packed single-walled carbon nanotubes and their application as super-capacitor electrodes
    Futaba, Don N.
    Hata, Kenji
    Yamada, Takeo
    Hiraoka, Tatsuki
    Hayamizu, Yuhei
    Kakudate, Yozo
    Tanaike, Osamu
    Hatori, Hiroaki
    Yumura, Motoo
    Iijima, Sumio
    [J]. NATURE MATERIALS, 2006, 5 (12) : 987 - 994
  • [8] Solving the Boltzmann equation to obtain electron transport coefficients and rate coefficients for fluid models
    Hagelaar, GJM
    Pitchford, LC
    [J]. PLASMA SOURCES SCIENCE & TECHNOLOGY, 2005, 14 (04) : 722 - 733
  • [9] Simulation of the dc plasma in carbon nanotube growth
    Hash, D
    Bose, D
    Govindan, TR
    Meyyappan, M
    [J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) : 6284 - 6290
  • [10] Model based comparison of thermal and plasma chemical vapor deposition of carbon nanotubes
    Hash, DB
    Meyyappan, M
    [J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (01) : 750 - 752