Experimental Demonstration of XOR Operation in Graphene Magnetologic Gates at Room Temperature

被引：63

作者：

Wen, Hua ^{[1
,2
]}

Dery, Hanan ^{[3
]}

Amamou, Walid ^{[1
]}

Zhu, Tiancong ^{[2
]}

Lin, Zhisheng ^{[1
]}

Shi, Jing ^{[1
]}

Zutic, Igor ^{[4
]}

Krivorotov, Ilya ^{[5
]}

Sham, L. J. ^{[6
]}

Kawakami, Roland K. ^{[1
,2
]}

机构：

[1] Univ Calif Riverside, Dept Phys & Astron, Riverside, CA 92521 USA

[2] Ohio State Univ, Dept Phys, 174 W 18th Ave, Columbus, OH 43210 USA

[3] Univ Rochester, Dept Elect & Comp Engn, 601 Elmwood Ave, Rochester, NY 14627 USA

[4] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA

[5] Univ Calif Irvine, Dept Phys & Astron, Irvine, CA 92697 USA

[6] Univ Calif San Diego, Dept Phys, La Jolla, CA 92697 USA

来源：

PHYSICAL REVIEW APPLIED | 2016年 / 5卷 / 04期

基金：

美国国家科学基金会;

关键词：

SPIN TRANSPORT; SPINTRONICS; INJECTION; SEMICONDUCTORS;

D O I：

10.1103/PhysRevApplied.5.044003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the experimental demonstration of a magnetologic gate built on graphene at room temperature. This magnetologic gate consists of three ferromagnetic electrodes contacting a single-layer graphene spin channel and relies on spin injection and spin transport in the graphene. We utilize electrical bias tuning of spin injection to balance the inputs and achieve "exclusive or" (XOR) logic operation. Furthermore, a simulation of the device performance shows that substantial improvement towards spintronic applications can be achieved by optimizing the device parameters such as the device dimensions. This advance holds promise as a basic building block for spin-based information processing.

引用

页数：6

共 31 条

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