X-ray photoelectron spectroscopy study of highly-doped ZnO: Al,N films grown at O-rich conditions

被引：34

作者：

Ievtushenko, A. ^{[1
]}

Khyzhun, O. ^{[1
]}

Shtepliuk, I. ^{[1
]}

Bykov, O. ^{[1
]}

Jakiela, R. ^{[2
]}

Tkach, S. ^{[3
]}

Kuzmenko, E. ^{[3
]}

Baturin, V. ^{[4
]}

Karpenko, O. ^{[4
]}

Olifan, O. ^{[1
]}

Lashkarev, G. ^{[1
]}

机构：

[1] Natl Acad Sci Ukraine, I Frantsevich Inst Problems Mat Sci, 3 Krzhizhanovskogo Str, UA-03680 Kiev, Ukraine

[2] Polish Acad Sci, Inst Phys, 32-46 Aleja Lotnikow, PL-02668 Warsaw, Poland

[3] Natl Acad Sci Ukraine, V Bakul Inst Superhard Mat, 2 Avtozavodskaya Str, UA-04074 Kiev, Ukraine

[4] Natl Acad Sci Ukraine, Inst Appl Phys, 58 Petropavlovskaya Str, UA-40030 Sumy, Ukraine

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2017年 / 722卷

关键词：

ZnO films; Nitrogen-aluminum doping; XRD; X-ray photoelectron spectroscopy; BAND-STRUCTURE CALCULATIONS; THIN-FILMS; ELECTRONIC-PROPERTIES; ZINC-OXIDE; OPTICAL-PROPERTIES; NITROGEN; PHOTOLUMINESCENCE; XPS; MICROSTRUCTURE; NANOPARTICLES;

D O I：

10.1016/j.jallcom.2017.06.169

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Highly-doped ZnO: Al,N films were grown under oxygen-rich conditions on Si substrates by magnetron sputtering using a layer-by-layer growth technique. An investigation of the highly-doped ZnO: Al, N films is attractive for obtaining p-type conductivity in ZnO films as well as for an improvement of performance of ZnO-based ultraviolet (UV) detectors. X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis (EDX), X-ray photoelectron spectroscopy (XPS), X-ray emission spectroscopy (XES) and Secondary ion mass spectrometry (SIMS) were used for the samples characterization. An effect of high Al and N doping on structure and electronic properties of ZnO films was studied and discussed. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：683 / 689

页数：7

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