An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Array

被引：3

作者：

Kao, Yun-Feng ^{[1
]}

Shih, Jiaw-Ren ^{[1
]}

Lin, Chrong Jung ^{[1
]}

King, Ya-Chin ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Inst Elect Engn, Microelect Lab, Hsinchu 300, Taiwan

来源：

NANOSCALE RESEARCH LETTERS | 2021年 / 16卷 / 01期

关键词：

RRAM; Variability; Stochastic model; Monte Carlo Simulation; Trap-assisted tunneling; THERMAL DISSOLUTION MODEL; RRAM; LOGIC; RESET; MECHANISMS;

D O I：

10.1186/s11671-021-03569-0

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

As one of the most promising embedded non-volatile storage solutions for advanced CMOS modules, resistive random access memory's (RRAM) applications depend highly on its cyclability. Through detailed analysis, links have been found between noise types, filament configurations and the occurrence of reset failure during cycling test. In addition, a recovery treatment is demonstrated to restore the cyclability of RRAM. An early detection circuit for vulnerable cells in an array is also proposed for further improving the overall endurance of an RRAM array. Lifetime of RRAM can be extended to over 10 k cycles without fail bits in an array.

引用

页数：9

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