High-performance normally-off tri-gate GaN power MOSFETs

被引：0

作者：

Zhu, Minghua ^{[1
]}

Ma, Jun ^{[1
]}

Nela, Luca ^{[1
]}

Matioli, Elison ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Power & Wide Band Gap Elect Res Lab POWERLAB, CH-1015 Lausanne, Switzerland

来源：

2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2019年

基金：

瑞士国家科学基金会; 欧洲研究理事会;

关键词：

Gallium Nitride; normally-off; MOSFET; tri-gate; recess; high breakdown; low leakage; THRESHOLD VOLTAGE; SILICON SUBSTRATE; MOBILITY; PLASMA; HEMTS;

D O I：

10.1109/ispsd.2019.8757690

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this work, we present the investigation of the combination of gate recess and tri-gate structures to achieve high performance normally-off GaN-on-Si MOSFETs with high positive threshold voltage (V-TH), low specific on resistance (R-ON,(SP)) and high output current (I-D(max)). The excellent channel control capability offered by tri-gate structure led to a reduced OFF-state leakage current (I-OFF), higher ON/OFF ratio, smaller subthreshold slope (SS) compared to similar planar and recessed-gate devices. With gate to drain length (L-GD) of 20 mu m, a hard V-BR of 2050 V were achieved, along with a low R-ON,R-SP of 2.42 m Omega.cm(2), which corresponds to a state-of-the-art figure of merit (FOM) of 1.73 GW/cm(2). These results unveil the electronics applications.

引用

页码：71 / 74

页数：4

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