Temperature effects on metal-alumina-nitride-oxide-silicon memory operations

被引：21

作者：

Padovani, Andrea ^{[1
,2
]}

Larcher, Luca ^{[1
,2
]}

Heh, Dawei ^{[3
]}

Bersuker, Gennadi ^{[3
]}

Della Marca, Vincenzo ^{[2
,4
]}

Pavan, Paolo ^{[2
,4
]}

机构：

[1] Univ Modena & Reggio Emilia, DISMI, I-42122 Reggio Emilia, Italy

[2] IU NET, I-40125 Bologna, Italy

[3] SEMATECH, Austin, TX 78741 USA

[4] Univ Modena & Reggio Emilia, DII, I-41125 Modena, Italy

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 22期

关键词：

RETENTION; AL2O3;

D O I：

10.1063/1.3446835

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a detailed investigation of temperature effects on the operation of TaN/Al(2)O(3)/Si(3)N(4)/SiO(2)/Si (TANOS) memory devices. We show that not only retention but also program and erase operations are affected significantly by temperature. Using a large set of experimental data and simulations on a variety of TANOS stacks, we show that the temperature dependence of TANOS program and erase operations can be explained by accounting for that the alumina dielectric constant increases by 20%-25% over a 125 K temperature range. (C) 2010 American Institute of Physics. [doi:10.1063/1.3446835]

引用

页数：3

共 50 条

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