Total Ionizing Dose Effects in Si-Based Tunnel FETs

被引：15

作者：

Ding, Lili ^{[1
,2
,3
,4
]}

Gnani, Elena ^{[2
,3
]}

Gerardin, Simone ^{[5
]}

Bagatin, Marta ^{[5
]}

Driussi, Francesco ^{[6
]}

Palestri, Pierpaolo ^{[6
]}

Selmi, Luca ^{[6
]}

Le Royer, Cyrille ^{[7
]}

Paccagnella, Alessandro ^{[5
]}

机构：

[1] Univ Padua, Dept Informat Engn, RREACT Grp, I-35131 Padua, Italy

[2] Univ Bologna, ARCES, I-40136 Bologna, Italy

[3] Univ Bologna, DEI, I-40136 Bologna, Italy

[4] Ist Nazl Fis Nucl, I-35131 Padua, Italy

[5] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy

[6] Univ Udine, Dept Elect Mech & Management Engn, I-33100 Udine, Italy

[7] CEA Grenoble, LETI, F-38054 Grenoble, France

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2014年 / 61卷 / 06期

关键词：

Band-to-band tunneling (BTBT); total ionizing dose effects; tunnel FET; FIELD-EFFECT TRANSISTORS; BIAS; SUBTHRESHOLD; IRRADIATION; DENSITY;

D O I：

10.1109/TNS.2014.2367548

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Total ionizing dose (TID) effects in Si-based tunnel finite element transfers (FETs) were investigated for the first time. Under 10-keV X-ray irradiation environment, along with the increase in total dose, a shift of the transfer characteristics and an increase in the interface trap density could be observed. After irradiation at 1 Mrad(SiO2) (and higher dose), the threshold voltage and the band-to-band tunneling conduction were only modestly affected, despite the thick buried oxide (140 nm). In contrast, under the same bias and irradiation environment, a FDSOI nMOSFET fabricated with a similar process presented a more severe degradation, suggesting the robustness of TFETs against TID effects. The underlying mechanism was explored through device simulation and ascribed to be due to the peculiarity of the doping structures of TFETs.

引用

页码：2874 / 2880

页数：7

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