Optoelectronic properties of single-crystalline GaInAsSb quaternary alloy nanowires

被引：4

作者：

Li, Meng-Zi ^{[1
]}

Chen, Xin-Liang ^{[1
]}

Li, Hong-Lai ^{[1
]}

Zhang, Xue-Hong ^{[1
]}

Qi, Zhao-Yang ^{[1
]}

Wang, Xiao-Xia ^{[1
]}

Fan, Peng ^{[1
]}

Zhang, Qing-Lin ^{[1
]}

Zhu, Xiao-Li ^{[1
]}

Zhuang, Xiu-Juan ^{[1
]}

机构：

[1] Hunan Univ, Sch Phys & Elect Sci, Key Lab Micronano Phys & Technol Hunan Prov, Changsha 410082, Hunan, Peoples R China

来源：

CHINESE PHYSICS B | 2018年 / 27卷 / 07期

基金：

中国国家自然科学基金;

关键词：

GaInAsSb nanowire; quaternary alloy; near-infrared photodetector; INFRARED PHOTODETECTORS; GROWTH; INTEGRATION; BANDGAP; DESIGN; ARRAYS; LASERS;

D O I：

10.1088/1674-1056/27/7/078101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Bandgap engineering of semiconductor nanomaterials is critical for their applications in nanoelectronics, optoelectronics, and photonics. Here we report, for the first time, the growth of single-crystalline quaternary alloyed Ga0.75In0.25As0.49Sb0.51 nanowires via a chemical-vapor-deposition method. The synthesized nanowires have a uniform composition distribution along the growth direction, with a zinc-blende structure. In the photoluminescence investigation, these quaternary alloyed semiconductor nanowires show a strong band edge light emission at 1950 nm (0.636 eV). Photodetectors based on these alloy nanowires show a strong light response in the near-infrared region (980 nm) with the external quantum efficiency of 2.0 x 10(4) % and the responsivity of 158 A/W. These novel near-infrared photodetectors may find promising applications in integrated infrared photodetection, information communication, and processing.

引用

页数：5

共 39 条

[1] Wide Range Photodetector Based on Catalyst Free Grown Indium Selenide Microwires [J].

Ali, Zulfiqar ;

Mirza, Misbah ;

Cao, Chuanbao ;

Butt, Faheem K. ;

Tanveer, M. ;

Tahir, Muhammad ;

Aslam, Imran ;

Idrees, Faryal ;

Safdar, Muhammad .

ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (12) :9550-9556

[2]

Bhagwat V, 2006, J ELECT MAT, V35, P8

[3] Synthesis and optoelectronic properties of quaternary GaInAsSb alloy nanosheets [J].

Chen, Xinliang ;

Li, Honglai ;

Qi, Zhaoyang ;

Yang, Tiefeng ;

Yang, Yankun ;

Hu, Xuelu ;

Zhang, Xuehong ;

Zhu, Xiaoli ;

Zhuang, Xiujuan ;

Hu, Wei ;

Pan, Anlian .

NANOTECHNOLOGY, 2016, 27 (50)

[4] GAINASSB METASTABLE ALLOYS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

CHERNG, MJ ;

STRINGFELLOW, GB ;

KISKER, DW ;

SRIVASTAVA, AK ;

ZYSKIND, JL .

APPLIED PHYSICS LETTERS, 1986, 48 (06) :419-421

[5] Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire [J].

Fang, Hehai ;

Hu, Weida ;

Wang, Peng ;

Guo, Nan ;

Luo, Wenjin ;

Zheng, Dingshan ;

Gong, Fan ;

Luo, Man ;

Tian, Hongzheng ;

Zhang, Xutao ;

Luo, Chen ;

Wu, Xing ;

Chen, Pingping ;

Liao, Lei ;

Pan, Anlian ;

Chen, Xiaoshuang ;

Lu, Wei .

NANO LETTERS, 2016, 16 (10) :6416-6424

[6] "Capillary-Bridge Lithography" for Patterning Organic Crystals toward Mode-Tunable Microlaser Arrays [J].

Feng, Jiangang ;

Jiang, Xiangyu ;

Yan, Xiaoxu ;

Wu, Yuchen ;

Su, Bin ;

Fu, Hongbing ;

Yao, Jiannian ;

Jiang, Lei .

ADVANCED MATERIALS, 2017, 29 (01)

[7] ENERGY BANDGAP AND LATTICE-CONSTANT CONTOURS OF III-V QUATERNARY ALLOYS [J].

GLISSON, TH ;

HAUSER, JR ;

LITTLEJOHN, MA ;

WILLIAMS, CK .

JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (01) :1-16

[8] High-Detectivity Polymer Photodetectors with Spectral Response from 300 nm to 1450 nm [J].

Gong, Xiong ;

Tong, Minghong ;

Xia, Yangjun ;

Cai, Wanzhu ;

Moon, Ji Sun ;

Cao, Yong ;

Yu, Gang ;

Shieh, Chan-Long ;

Nilsson, Boo ;

Heeger, Alan J. .

SCIENCE, 2009, 325 (5948) :1665-1667

[9] Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature [J].

Guo, Nan ;

Hu, Weida ;

Liao, Lei ;

Yip, SenPo ;

Ho, Johnny C. ;

Miao, Jinshui ;

Zhang, Zhi ;

Zou, Jin ;

Jiang, Tao ;

Wu, Shiwei ;

Chen, Xiaoshuang ;

Lu, Wei .

ADVANCED MATERIALS, 2014, 26 (48) :8203-8209

[10] On-Nanowire Axial Heterojunction Design for High-Performance Photodetectors [J].

Guo, Pengfei ;

Xu, Jinyou ;

Gong, Ke ;

Shen, Xia ;

Lu, Yang ;

Qiu, Yang ;

Xu, Junqi ;

Zou, Zhijun ;

Wang, Chunlei ;

Yan, Hailong ;

Luo, Yongsong ;

Pan, Anlian ;

Zhang, Han ;

Ho, Johnny C. ;

Yu, Kin Man .

ACS NANO, 2016, 10 (09) :8474-8481

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