Quantized double-layer charging of iron oxide nanoparticles on a-Si:H controlled by charged defects in a-Si:H

被引:3
作者
Weis, Martin [1 ]
Gmucova, Katarina
Nadazdy, Vojtech
Capek, Ignac
Satka, Alexander
Kopani, Martin
Cirak, Julius
Majkova, Eva
机构
[1] Slovak Univ Technol Bratislava, Fac Elect Engn & Informat Technol, Dept Phys, SK-81219 Bratislava, Slovakia
[2] Slovak Acad Sci, Inst Phys, SK-84511 Bratislava, Slovakia
[3] Slovak Acad Sci, Inst Polymer, SK-84236 Bratislava, Slovakia
[4] Ctr Int Laser, SK-81219 Bratislava, Slovakia
[5] Comenius Univ, Bratislava, Slovakia
关键词
quantized double-layer charging; nanoparticles; amorphous silicon; Langmuir-Blodgett layers; voltammetry;
D O I
10.1002/elan.200703858
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Sequential single-electron charging of iron oxide nanoparticles encapsulated in oleic acid/oleyl amine envelope and deposited by the Langmuir-Blodgett technique onto Pt electrode covered with undoped hydrogenated amorphous silicon film (a-Si:H) is reported. Quantized double-layer charging of nanoparticles is detected by cyclic voltammetry as current peaks and the charging effect can be switched on/off by the excess of negative/positive charged defect states in the a-Si:H layer. The particular charge states in a-Si:H are created by the simultaneous application of a suitable bias voltage and illumination before the measurement.
引用
收藏
页码:1323 / 1326
页数:4
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