Observation of carbon clusters at the 4H-SiC/SiO2 interface

被引：61
|
作者：
Afanas'ev, VV
Stesmans, A
Harris, CI
机构：
[1] Univ Louvain, Dept Phys, B-3001 Louvain, Belgium
[2] Ind Microelect Ctr, S-16421 Kista, Sweden
来源：
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷
关键词：
scanning probe microscopy; oxidation; interface;
D O I：
10.4028/www.scientific.net/MSF.264-268.857
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Analysis of the 4H SiC(0001)/SiO2 interface using atomic force microscopy revealed the presence of the nanometer-sized platelet-shaped inhomogeneities which are resistant to HF etching, but can be removed by ozone. These inhomogeneities are suggested to be carbon inclusions formed during thermal oxidation of SiC. Their density was found to be sensitive to the type of pre-oxidation surface cleaning, and to be correlated with the density of electrically active SiC/SiO2 interface states. This relationship between SiC/SiO2 interface defects and the interfacial carbon clusters explains the observed resistance of 4H SiC/SiO2 interface states against hydrogen passivation.
引用
收藏
页码：857 / 860
页数：4
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